Investigation of the properties of Sb doping on tin oxide SNO<sub>2</sub>materials for technological applications

Hachoun, Zoubir; Ouerdane, A.; Bouslama, M.; Ghaffour, M.; Abdellaoui, Abdelkader; Caudano, Yves; Benamara, A. Ali

doi:10.1088/1757-899x/123/1/012029

Cited by 2 publications

(2 citation statements)

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“…Tin oxide is usually doped with indium [6], lithium [7] zinc [8],copperaluminum [9], flour [10], antimony and flour [11] as well as indium and palladium [12]. Antimony is one of the dopant elements that is quite good in the thin layer of tin oxide with several advantages, namely increasing the conductivity properties [13], reducing resistivity properties [14], improving optical properties [15], improving electrical properties [16], dopant for transparent material Conductor Oxide [17] and good response to sensor applications [18]. These advantages can be known by characterizing using several test equipment such as UV-Vis spectrophotometer, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) coupled with Energy Dispersive X-Ray (EDX).…”

Section: Introductionmentioning

confidence: 99%

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Doyan

Susilawati

Harjono

et al. 2019

MSF

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Antimony tin oxide coating research has been carried out using a spin sol gel coating method with different doping concentrations (0, 5, 10, 15, 20)%. The results of the study on the morphological structure (SEM) of thin films that have been carried out showed more cracks on the surface of the morphology of thin layers without doping compared to thin layers with doping antimony. The Results of crystal structure of XRD in thin antimony doping tin oxide layer shows the grinding index of tin oxide crystals, 101, 110, 211, 220. In grain size, with increasing antimony doping percentage, the average grain size decreases. The optical properties using UV-Vis in thin films of antimony tin oxide doping show samples including semiconductor materials that can be used as electronic devices as seen from the reduction of this energy gap (3,680 - 3,574) eV. Also seen is an increase in the percentage of antimony doping and repetition of layers, the lower the transmissions value, but the value of absorbance of the thin layer increases.

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Section: Introductionmentioning

confidence: 99%

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Doyan

Susilawati

Harjono

et al. 2019

MSF

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“…22 An easily accessible promising representative of MePcs is copper phthalocyanine (CuPc), which is now becoming a popular organometallic compound already applied in third generation solar cells, gas sensors and advanced optoelectronic technologies. [23][24][25] Up to now, the majority of studies were oriented towards various modifications of the tin oxide, 26 leaving the interfacial area unattended. There are only a few studies reporting thorough characterization of both the interfacial area and the processes taking place there.…”

Section: Introductionmentioning

confidence: 99%

Oxide–organic heterostructures: a case study of charge transfer disturbance at a SnO₂–copper phthalocyanine buried interface

Krzywiecki

Grządziel

Powroźnik

et al. 2018

Phys. Chem. Chem. Phys.

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Reduced tin dioxide/copper phthalocyanine (SnOx/CuPc) heterojunctions recently gained much attention in hybrid electronics due to their defect structure, allowing tuning of the electronic properties at the interface towards particular needs. In this work, we focus on the creation and analysis of the interface between the oxide and organic layer. The inorganic/organic heterojunction was created by depositing CuPc on SnOx layers prepared with the rheotaxial growth and vacuum oxidation (RGVO) method. Exploiting surface sensitive photoelectron spectroscopy techniques, angle dependent X-ray and UV photoelectron spectroscopy (ADXPS and UPS, respectively), supported by semi-empirical simulations, the role of carbon from adventitious organic adsorbates directly at the SnOx/CuPc interface was investigated. The adventitious organic adsorbates were blocking electronic interactions between the environment and surface, hence pinning energy levels. A significant interface dipole of 0.4 eV was detected, compensating for the difference in work functions of the materials in contact, however, without full alignment of the energy levels. From the ADXPS and UPS results, a detailed diagram of the interfacial electronic structure was constructed, giving insight into how to tailor SnOx/CuPc heterojunctions towards specific applications. On the one hand, parasitic surface contamination could be utilized in technology for passivation-like processes. On the other hand, if one needs to keep the oxide's surficial interactions fully accessible, like in the case of stacked electronic systems or gas sensor applications, carbon contamination must be carefully avoided at each processing step.

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Investigation of the properties of Sb doping on tin oxide SNO₂materials for technological applications

Cited by 2 publications

References 1 publication

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Oxide–organic heterostructures: a case study of charge transfer disturbance at a SnO₂–copper phthalocyanine buried interface

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Investigation of the properties of Sb doping on tin oxide SNO2materials for technological applications

Cited by 2 publications

References 1 publication

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Oxide–organic heterostructures: a case study of charge transfer disturbance at a SnO2–copper phthalocyanine buried interface

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Investigation of the properties of Sb doping on tin oxide SNO₂materials for technological applications

Oxide–organic heterostructures: a case study of charge transfer disturbance at a SnO₂–copper phthalocyanine buried interface