Investigation of the low-field leakage through high-k interpoly dielectric stacks and its impact on nonvolatile memory data retention

Govoreanu, B.; Wellekens, D.; Haspeslagh, L.; Vos, Joeri De; Houdt, J. Van

doi:10.1109/iedm.2006.346818

Cited by 28 publications

(27 citation statements)

References 5 publications

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“…Further details of the model can be found in Ref. 12. The main purpose of these simulations was to verify if the asymmetric leakage distributions observed in our capacitors with RuO x BE and TiN TE could be accounted for based on the asymmetric trap distribution obtained by healing of the STO close to the RuO x BE.…”

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confidence: 99%

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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

et al. 2012

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Articles you may be interested inLow leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20nm technology node in dynamic random access memory Appl. Phys. Lett. Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes J. Vac. Sci. Technol. B 31, 01A109 (2013); 10.1116/1.4768791 Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode Appl. Phys. Lett. 99, 022901 (2011); 10.1063/1.3609875 Impact of crystallization behavior of Sr x Ti y O z films on electrical properties of metal-insulator-metal capacitors with TiN electrodes Appl. Phys. Lett. 97, 162906 (2010); 10.1063/1.3505323 Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors J.

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confidence: 99%

“…An inelastic trap-assisted tunneling (TAT) model, described in detail in Ref. 12, was used, which allows taking into account arbitrary trap distributions in both energy and space. The energy loss (gain) of a (de)trapped electron is enabled through a one-mode electronphonon interaction.…”

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confidence: 99%

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

et al. 2012

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“…Table II shows the trap energy levels obtained from fitting the experimental results with our simulations, along with those reported in the literature for Al 2 O 3 layers. Although there are little information about the energy distribution of electron traps in amorphous Al 2 O 3 , the shallower trap energy level obtained in this work (2.2 eV) lie in the middle of the band of defects reported by Govoreanu et al, 3 whereas the deeper one (2.6 eV) would be in the tail of the same band.…”

Section: B Energy Levels Of the Electron Trapsmentioning

confidence: 84%

“…[3][4][5][6][7][8][9][10] Due to its high dielectric constant (j Al2O3 $ 9), the control gate-floating gate coupling ratio is increased without reducing the IPD's physical thickness. In addition, the band gap of Al 2 O 3 ($9 eV) is high in comparison to other high-j dielectrics, improving data retention.…”

Section: Introductionmentioning

confidence: 99%

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Salomone

Lipovetzky

Carbonetto

et al. 2013

Journal of Applied Physics

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Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm−3 and 1.6 × 1018 cm−3, respectively.

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“…Recently, high-k materials or their combination for an IPD layer have been researched as alternatives [1]- [3]. Among them, SiO 2 /Al x O y /SiO 2 (OAO) structure is one of the promising candidates with advantages of high dielectric constant, low trap density, high tunnel barrier, and process stability of aluminum oxide [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

Lee

Park

Choi

et al. 2010

IEEE Electron Device Lett.

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We investigate the retention reliability of a 51-nmnode 16-GB NAND Flash cell transistor comprising SiO 2 /Al x O y / SiO 2 inter-poly dielectric (OAO IPD). Despite the fact that OAO IPD retains low trapping rate being beneficial to retention reliability, the trap sites are located on shallow energy level, yielding a large amount of trap-assisted tunneling current at high temperature. Therefore, experimental results show two incompatible data retention characteristics of OAO IPD, namely, 33% worse V TH shift at 200 • C 2-h bake and 53% improved V TH shift after one week at 25 • C, when compared to the case of ONO IPD.Index Terms-High-k dielectric, inter-poly dielectric (IPD), NAND Flash memory, retention reliability.

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Investigation of the low-field leakage through high-k interpoly dielectric stacks and its impact on nonvolatile memory data retention

Cited by 28 publications

References 5 publications

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

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Investigation of the low-field leakage through high-k interpoly dielectric stacks and its impact on nonvolatile memory data retention

Cited by 28 publications

References 5 publications

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks