Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Pawlak, Małgorzata; Swerts, Johan; Popovici, Mihaela; Kaczer, B.; Kim, M.-S.; Wang, W.-C.; Tomida, Kazuyuki; Govoreanu, B.; Delmotte, Jeroen; Afanasʼev, Valeri; Schaekers, Marc; Vandervorst, Wilfried; Kittl, J. A.

doi:10.1063/1.4737871

Cited by 15 publications

(6 citation statements)

References 10 publications

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“… , Earlier reports on the ALD of STO from a group at University of Helsinki have not shown promising electrical properties on such metal electrodes, and technically meaningful reports considering both points have only been made recently mostly by two groups. One is the group at Interuniversity Microelectronics Centre (IMEC), which has reported the use of Sr( t Bu 3 Cp) 2 and Ti(OMe) 4 (Bu and Me are C 4 H 9 and CH 3 , respectively) as the Sr and Ti precursors, respectively, at a low growth temperature ( T g ) of 250 °C, due to the limited thermal stability of Ti(OMe) 4 at higher T g . − As already noted by the group of the present authors, STO films grown at such low T g have been accompanied by cracking problems during post deposition annealing performed to crystallize the amorphous as-deposited films . The IMEC group reported that the film is crystallized with finer grains without cracking problems when the film composition is slightly Sr-rich [Sr/(Sr + Ti) ∼ 62 atom %].…”

Section: Introductionsupporting

confidence: 64%

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

et al. 2013

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The characteristics of the atomic layer deposition (ALD) of SrTiO3 (STO) films were examined for metal–insulator–metal capacitors, with Cp-based precursors Sr(iPr3Cp)2 and Cp*Ti(OMe)3 [Cp* = C5(CH3)5] employed as the Sr and Ti precursors, respectively. While the Sr precursor has a higher reactivity toward oxygen on the Ru substrate compared with another Ti precursor, with a 2,2,6,6-tetramethyl-3,5-heptanedionato ligand, which results in the highly Sr excessive STO film, the enhanced reactivity of the present Ti precursor suppressed the unwanted excessive incorporation of Sr into the film. A possible mechanism for the Sr overgrowth and retardation is suggested in detail. By controlling the subcycle ratio of SrO and TiO2 layers, stoichiometric STO could be obtained, even without employing a deleterious reaction barrier layer. This improved the attainable minimum equivalent oxide thickness of the Pt/STO/RuO2 capacitor to 0.43 nm, with acceptable leakage current density (∼8 × 10–8 A/cm2). This indicates an improvement of ∼25% in the capacitance density compared with previous work.

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Section: Introductionsupporting

confidence: 64%

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

et al. 2013

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“…This redox reaction is similar to the reported phenomenon in the SrTiO 3 based metal-oxide-semiconductor (MOS) structure. 34,35) Under the reductive atmosphere, RuO 2 is reduced to Ru and supplies oxygen to the layer, which is consistent with our results. The RuO 2 =BT-BMN structure showed less oxygen vacancies at the interface than the other electrodes.…”

Section: Resultssupporting

confidence: 92%

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

Nagata

Kumaragurubaran

Tsunekawa

et al. 2016

Jpn. J. Appl. Phys.

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The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3–Bi(Mg2/3Nb1/3)O3 (BT–BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT–BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT–BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT–BMN stack structure is a potential candidate for the high-temperature operational capacitor.

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“…Two high-density defect distributions (N TI =3x10 20 cm -3 ), probably originated by the intermixing between the Ru electrode and the STO (28), are defined near the interfaces. A uniform defect band is also considered along the whole STO thickness (N TB =1x10 19 cm -3 ), which is due to the intrinsic concentration of O vacancies (29)(30) and it is needed to reproduce the IV curves especially at low gate voltages. Then, we run CV and IV simulations by considering the rectangular defect distributions as sketched in Fig.…”

Section: Srtio Mim Capacitorsmentioning

confidence: 99%

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

Larcher

Sereni

Vandelli³

2016

ECS Trans.

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In this work we present a novel simulation-based methodology for the defect spectroscopy in dielectric materials. The cross-correlated simulation of electrical characteristics (IV, CV, GV, BTI, charge pumping and noise) is exploited to profile the properties and energy-space distribution of the defects within the oxide bandgap. This novel defect spectroscopy technique will be applied to three case studies, i.e. Si- MOSFET gate stack optimization with either Si and beyond Si channel (InGaAs), and STO MIM DRAM capacitor scaling. The integration of these methods into the process optimization will lead to a strong reduction of the time/cost required for the development of novel device architectures.

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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

Cited by 15 publications

References 10 publications

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Cited by 15 publications

References 10 publications

Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO_x/TiO_x/Sr_xTi_yO_z/TiN stacks

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Atomic Layer Deposition of SrTiO₃ Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors