Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications

Wang, Chin-Te; Hsu, Lih‐Hsing; Wu, Wei‐Cheng; Hsu, Houtse; Chang, Edward Yi; Hu, Yin-Chu; Lee, Ching-Ting; Tsai, Sheng‐Han

doi:10.1109/lmwc.2013.2285213

Cited by 8 publications

(4 citation statements)

References 12 publications

(10 reference statements)

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“…Other materials, such as benzo-cyclobutene (BCB), are becoming available for mm-waves applications. It has been measured that dielectric loss of BCB is as low as 0.0008 @ 20 GHz meanwhile in the case of epoxies it can be as high as 0.02 @ 10 MHz [31].…”

Section: Assembly Methodsmentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Lahti

Kautio

Karppinen

et al. 2020

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Technical Research Centre of Finland Ltd. has developed and utilized Low Temperature Co-fired Ceramic (LTCC) technology for about 25 years. This paper presents our activities related to photonics and millimetre-waves, including also a relevant literature survey. First a short summary of the technology is given. Especially, the unique features of LTCC technology are described in more details. In addition, several examples have been given to show the validity of LTCC technology in these high-performance fields.

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Section: Assembly Methodsmentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Lahti

Kautio

Karppinen

et al. 2020

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“…For good return loss performance, Au or Silver small bumps with a size of 20-65 μm are used for the flip-chip packaging [18,19,22,24,25,26]. However, as the motherboard is below the RFIC, these small bumps may cause strong impedance detuning.…”

Section: Design and Optimization The Flip-chip Interconnectmentioning

confidence: 99%

“…Unfortunately, as the dielectric constant of the underfill is relatively high compared to the air, the interconnect parasitics are increased further, worsening the interconnect performance. Until now, only a few works have considered the effects of the underfill material on the mm-Wave flipchip packaging [24,25,26], and the parasitic parameters of the interconnect are not well characterized. To address above issues, in this letter a new physical hybrid equivalent circuit model is proposed for accurate interconnect design.…”

Section: Introductionmentioning

confidence: 99%

Effects of underfill on wideband flip-chip packaging for 5G millimeter-wave applications

Xia

Zhang

Liu

et al. 2023

IEICE Electron. Express

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This letter investigates the effects of the underfill on the wideband flip-chip packaging for 5G millimeter-wave (mm-Wave) applications. For accurate interconnect design, a new hybrid equivalent circuit model is proposed. Targeting at the phased array systems with high density I/Os, a compact anti-pad structure is implemented and co-designed with the high impedance transmission line and the low-cost 90 μm solder balls, compensating the flip-chip capacitive parasitics and realizing the compact low-loss interconnect. To evaluate the underfill effect on the interconnect parasitics, both theoretical analyses and simulations are undertaken. For demonstration, by using a glass substrate with the fan-out process, back-toback flip-chip packaging structures are designed, fabricated, and measured. Measured results demonstrate that with and without underfill U8410-99 the interconnect return loss is better than 20 and 10 dB from DC to 90 GHz, with an insertion loss of 0.2 and 0.45dB at 60GHz, respectively.

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“…These measured results compare favorably with other integration approaches, including flip-chip integration and split-block waveguide-MMIC transitions. Flip-chip integration has been demonstrated with insertion loss of 0.6 dB to 100 GHz at 15-dB return loss (see e.g., [11]), but typically requires high-impedance compensation sections that increase area and reduce bandwidth [12]. For split-block waveguide transitions, transition losses of approximately 1 dB have been achieved (see e.g., [13]), corresponding to a chip-to-chip loss of ∼2 dB and return losses of ∼10 dB.…”

Section: Characterization and Interconnect Performancementioning

confidence: 99%

Ultra-wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits

Fay

Bernstein

Tian³

et al. 2016

J Infrared Milli Terahz Waves

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Heterogeneous chip-to-chip interconnects with low loss and ultra-wide bandwidths have been demonstrated. Coplanar waveguide-based interconnects between GaAs and Si die have been fabricated and characterized and the results compared to expectations from fullwave electromagnetic simulation. Broadband transmission characteristics were obtained, with insertion losses below 0.3 dB at 100 GHz and below 0.8 dB at frequencies up to 220 GHz demonstrated experimentally. The measured return loss exceeded 11.5 dB at all frequencies up to 220 GHz. The interconnects offer low latency, with a measured group delay of 0.69 ps. The measured results are in good agreement with full-wave simulations, indicating that the measured results do not suffer from significant impairments compared to theoretical predictions. The demonstrated interconnects offer an alternative to conventional approaches to millimeter-wave circuit and system integration, by enabling the compact realization of circuits in the microwave, millimeter-wave, sub-millimeter-wave, and THz frequency regimes in heterogeneous device technologies with very low chip-to-chip insertion loss.

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Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications

Cited by 8 publications

References 12 publications

International Journal of Electronics and Telecommunications

International Journal of Electronics and Telecommunications

Effects of underfill on wideband flip-chip packaging for 5G millimeter-wave applications

Ultra-wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits

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