Investigation of the deformation behavior of aluminum micropillars produced by focused ion beam machining using Ga and Xe ions

Deformation of lamellar γ-TiAl below the general yield stress

“…It is encouraging that in-so-far as the resolution of the DIC strain and EBSD maps indicate, the basic location of initial plasticity is identical in both the polycrystalline tensile testpieces and the single colony microcompression specimens at 25 ºC and 700 ºC. Recent comparison of Ga + and Xe + milling methods [38] has revealed significant Ga build-up along crystal boundaries which may modify the mechanical properties of the interface region, and results in a reduced strength. However, the high coherency of the lamellar interfaces in γ-TiAl alloys relative to higher angle grain boundaries is likely to render the γ/γ and γ/α 2 lamellar interfaces less susceptible to Ga segregation.…”

On the Application of Xe+ Plasma FIB for Micro-fabrication of Small-scale Tensile Specimens

“…This greatly improves the practically achievable scale of specimens [24,25]. In addition, by using an inert species, the Xe + FIB does not promote phase changes due to micro-alloying as seen with Ga + FIB [21].…”

“…These types of samples are therefore better suited to the study of single and bi-crystal properties [6,20]. A further issue with Ga + FIBs for micro fabrication is the implantation and subsequent diffusion of Ga + ions that can lead to damage such as phase changes and segregation to grain boundaries that can affect mechanical properties of sensitive materials [21].…”

Grain boundary segregation and precipitation in an Al-Zn-Mg-Cu alloy

“…The GB is clearly visible in the atom maps with a region enriched with coarse precipitates as indicated by the red rectangle. The ions of Xe in the range of the corresponding mass spectrum are also displayed, with no enrichment of Xe observed at the GB [32]. Fig.…”