Investigation of the amorphous to microcrystalline phase transition of thin film prepared by electron cyclotron resonance chemical vapor deposition method

Chang, Teng-Hsiang; Chang, Jenq Yang; Chu, Yen-Ho; Lee, Chien Chieh; Chen, I-Chen; Li, Tomi

doi:10.1016/j.surfcoat.2012.10.008

Cited by 10 publications

(6 citation statements)

References 13 publications

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“…These results, i.e., the larger redshift of the c-Ge-Ge peak from the peak of bulk Ge (300.5 cm −1 ), the coexistence of the a-and c-Ge-Ge peaks, and the small crystalline fraction, suggest that sample B is a microcrystalline Ge (µc-Ge) film. 33,34) The sharp c-Ge-Ge peak is also observed in the Raman spectrum of sample C and is similar to the peak shape of the annealed samples [see Figs. ∼298.8 cm −1 and its FWHM slightly decreases (7.0 to 6.5 cm −1 ) with the growth temperature increasing from 350 to 450 °C.…”

Section: Resultssupporting

confidence: 63%

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Feng

Xin

et al. 2016

Jpn. J. Appl. Phys.

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We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ annealing on them. With increasing growth temperature, Ge films undergo a transition from amorphous to microcrystalline, then to polycrystalline. After annealing, these thin films transform into polycrystalline films with the (111) preferred orientation and identical crystal sizes. The surfaces of the amorphous and microcrystalline Ge films are severely coarsened, whereas the polycrystalline Ge film still displays a smooth surface. The growth mechanisms of Ge films with different crystalline phases in the annealing process are discussed, which can explain their morphology evolutions. Additionally, their infrared absorptions are enhanced after annealing, and this is useful for fabricating high-efficiency Si-based solar cells.

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Section: Resultssupporting

confidence: 63%

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Feng

Xin

et al. 2016

Jpn. J. Appl. Phys.

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“…These indicate that ECR-CVD can be another choice for the epitaxial growth of Si and Ge films. In our previous studies, we obtained the amorphous to microcrystalline silicon phase transition at a lower hydrogen dilution ratio (H 2 /SiH 4 = 0.71) compared with PECVD, demonstrating the high dissociation of ECR-CVD [26]. Moreover, we can deposit the Ge thin films with high crystallinity and conductivity on glass substrates using ECR-CVD [27].…”

Section: Introductionmentioning

confidence: 82%

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Chang

Chu

et al. 2014

International Journal of Photoenergy

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This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

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“…[8]- [10], have been 67 deposited using the ECR-CVD plasma method. In addition, 68 a-Si:H films deposited by ECR-CVD have shown good elec-69 trooptical properties for solar cell applications [11], [12].…”

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confidence: 99%

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

García-Hernansanz

García-Hemme

Montero

et al. 2016

IEEE J. Photovoltaics

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Investigation of the amorphous to microcrystalline phase transition of thin film prepared by electron cyclotron resonance chemical vapor deposition method

Cited by 10 publications

References 13 publications

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

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