Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Kaushik, Janesh K; Balakrishnan, V.R.; Mongia, Deepti; Kumar, Upendra; Dayal, Sindhu; Panwar, B.S.; Muralidharan, R.

doi:10.1016/j.tsf.2016.06.003

Cited by 21 publications

(8 citation statements)

References 25 publications

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“…In addition, as seen in Figure a,b, the tendency of C values to increase in the copolymer interface structure at higher reverse biases in the inversion region can be addressed by the localized surface/interface states or trap levels in this region. This situation can also be related to the noise effect in the leakage current in the ln I – V plot (see Figure b) …”

Section: Resultsmentioning

confidence: 99%

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Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

“…This situation can also be related to the noise effect in the leakage current in the ln I−V plot (see Figure 4b). 66 When light illuminates the device, additional e − −h + pairs are generated through optical absorption. The mechanism behind this effect is known as the photovoltaic effect or photoconductive effect.…”

Section: Resultsmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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“…In figure 3(b), the devices exhibit an on/off current ratio over 10 8 as well as sustain large input gate voltage from −15 to 10 V, suggesting a good vertical leakage current blocking capability of gate dielectrics. The gate reverse leakage currents are relatively low at V GS = 15 V so that the surface conduction effect can be ignored [20]. In addtion, the output I ∼ V curves show a smaller static on-resistance (R on ) of 12.7 Ω•mm and a higher current density of 493 mA mm −1 at V GT = 6 V in the MIS-HEMT due to the high electron mobility as well as charge density in the unetched channel as illustrated in figure 4.…”

Section: Static Characteristicsmentioning

confidence: 99%

Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors

Sun¹,

Huang²,

Wang³

et al. 2020

J. Phys. D: Appl. Phys.

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In this work, we performed an investigation on the electrical characteristics of the interfaces of SiON/AlGaN and SiON/GaN by fabricating a partially gate-recessed metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) and a fully gate-recessed metal-insulator-semiconductor field-effect transistor (MIS-FET). The fabricated MIS-HEMT exhibits a smaller static on-resistance (R on) of 12.7 Ω · mm, while the MIS-FET achieves the normally-off operation. As a result of over-etching in the gate trench, a higher trap state density of 2 × 1013 cm−2eV−1 at the SiON/GaN interface in comparison to SiON/AlGaN interface (8 × 1012 cm−2eV−1), leading to a more obvious degradation of subthreshold swing, was extracted after performing the high temperature I DS−V GS tests. In addition, compared with the MIS-FET, the traps distributed at the SiON/AlGaN interface are found to be located at a deeper energy level, which make the device more stress sensitive and can cause a greater threshold voltage (V th) shift in the drain-bias stress measurement. The drain-bias stress at off-state increases the ionized trap density and makes the ionized traps unrecoverable within 1000 s in the MIS-HEMT. This work reveals the different properties of traps states at the SiON/AlGaN and SiON/GaN interfaces, and their effects on the device reliability.

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“…GaN is widely used in high-frequency and high-power next-generation devices because of its two-dimensional electron gas (2DEG) concentration, high carrier mobility, low ON resistance, and high breakdown voltage [1][2][3]. GaN has demonstrated increasing potential for a wide range of applications.…”

Section: Introductionmentioning

confidence: 99%

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

et al. 2021

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In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

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Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Cited by 21 publications

References 25 publications

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

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