Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics

Brozek, Tomasz; Huber, J.L.; Walls, James

doi:10.1016/s0038-1101(00)00272-0

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…It can be detected at rather low electrical fields at the transition from the direct tunneling to the Fowler-Nordheim (FN) regime of the current voltage characteristics. A common explanation of the underlying physics is the injection of holes from the anode of the capacitor leading to neutral traps in the oxide or the reactivation of passivated traps by injected electrons [5]. The leakage current is provided by electrons tunneling out of the cathode conduction band into the neutral traps and further from trap to trap.…”

Section: Introductionmentioning

confidence: 99%

Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents

Jank¹,

Frey²,

Bauer³

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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The influence of through the gate implantation (TGI) on MOS structures with an oxide thickness of 4.0 nm is investigated comparing implantation related trap assisted tunneling currents to leakage currents induced by electrical stress. Although the steady-state J-V characteristics show a similar behavior of the differently generated defects, trap filling experiments and electrical stress tests suggest different physical properties of either kind of defect. Also a decrease in trap generation rate with increasing TGI dose is detected, probably due to a TGI induced reduction of precursor sites for stress induced traps. As overall defect density is formed by the superposition of implantation induced and stress induced defects, this is not contradictory to a reduction of reliability with increasing TGI dose found earlier.

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Section: Introductionmentioning

confidence: 99%