Investigation of optical-microwave frequency conversion processes for PIN photodiode

Dawidczyk, Jarosław; Galwas, B.A.; Малышев, С. А.

doi:10.1109/edmo.1999.821468

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…Following published models of photodiodes [5], as well as our own measurements of the biased and illuminated photodiode using an impedance meter [10], we have added to our model this nonlinear capacitance. The problem is that the diode's capacitance is almost constant in the working zone to be used in photodetection (a reverse bias of -6 V).…”

Section: Study Of An Mz Based Optical Link: Rf Gainmentioning

confidence: 99%

A CAD approach of microwave optical systems including noise performance

Brahimi

Martinez-Reyes

Merrer

et al. 2009

2009 European Microwave Conference (EuMC)

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A technique for the simulation of a microwave optical system is described. This technique, based on microwave CAD software, allows the simulation of the gain and noise performance. The optical devices are described using either an equivalent circuit approach or equation based models. The simulations of a simple RF optical link and of a more complex system, a microwave optical delay line frequency discriminator, are presented.

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Section: Study Of An Mz Based Optical Link: Rf Gainmentioning

confidence: 99%

A CAD approach of microwave optical systems including noise performance

Brahimi

Martinez-Reyes

Merrer

et al. 2009

2009 European Microwave Conference (EuMC)

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“…In this manner the photodiode full fills the part of a detector and an up or down converter simultaneously [15]. By using an optical -fiber amplifier as a preamplifier high-power photo detectors in microwave photonic systems, the output electrical signal can be produced with enough power to directly drive the following microwave circuit [17].…”

Section: Introductionmentioning

confidence: 99%

“…The use of microwave-optical mixing phenomena allows for simplifying the process of electrical signal recovering. This technique assumes that the modulated optical signal is directly coupled to the photodiode junction area [15].…”

Section: Introductionmentioning

confidence: 99%

Comparison of intrinsic width for InGaAs PIN photodiode

Othman¹,

Yasin²,

Napiah³

et al. 2014

AIP Conference Proceedings

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Abstract. This paper presents comparison on the different intrinsic width of InGaAs PIN Photodiode. Intrinsic region is a pure semiconductor without any significant dopant species present. In this paper, it will present two different sizes of the intrinsic region for InGaAs PIN Photodiode. This photodiode will be designed by using Atlas Silvaco TCAD Tools. From the structure, the characteristics of the photodiode will be analyzed. The I-layer thickness (or width) is varied from 5μm x 20μm to 8μm x 20μm in order to investigate its effects on the current-voltage (IV) characteristics. These papers are separated into several sections consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between different intrinsic widths of InGaAs PIN Photodiode.

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