Investigation of Nonuniform Degradation of CMOS-Sensor Light-Sensitive Surface under Gamma-Irradiation

Cherniak, Maksim E.; Smolin, Anatoly A.; Ulanova, Anastasia V.; Nikiforov, Alexander Y.

doi:10.1109/radecs.2015.7365623

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…This pattern, which is present in all circuits, is responsible for pixel non-uniformity, probably due to the metal density differences in the imaging area with respect to the edges of the array. A dark current enhancement in the center of the device in γ-irradiated CIS has been reported in [9], [10] and [11] for different technologies, resulting in a similar CIS non-uniformity than the one observed in the structures investigated here. The second effect that can be recognized from Fig.…”

Section: Studied Sensor Architecture/experimental Detailssupporting

confidence: 76%

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Rizzolo

Goiffon

Sergent

et al. 2017

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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Section: Studied Sensor Architecture/experimental Detailssupporting

confidence: 76%

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Rizzolo

Goiffon

Sergent

et al. 2017

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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“…This hypothesis is supported by the fact that the same nonuniformity shape is observed when the sensor is illuminated. The circular shape leads to think that a possible cause should be the density metal difference between the edge and the center of the array [19]- [21].…”

Section: B Tid-induced Dark Current Increasementioning

confidence: 99%

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Rizzolo

Goiffon

Corbière

et al. 2019

IEEE Trans. Nucl. Sci.

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The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partially pinned PHDs at moderate-to-high TIDs is evaluated for the first time to our knowledge (PHD stands for "photodiode"). It is shown that the 3T-standard partially pinned PHD has the lowest dark current before irradiation, but its dark current increases to ∼1 pA at 10 kGy(SiO 2). Beyond 10 kGy(SiO 2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation-induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8-V MOSFETs exhibit the lower threshold voltage shift, and the nMOSFETs are the most radiation tolerant. Among all the tested devices, 1.8-V sensors achieve the best dark current performance. Several radiationhardening-by-design solutions are evaluated at the MGy level to improve further the understanding of CIS radiation hardening at extreme TID.

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General Issues of Gate-Level Simulation and Optimization of Digital Circuits with Consideration of Destabilizing Factors

Melikyan¹

2018

Simulation and Optimization of Digital Circuits

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Investigation of Nonuniform Degradation of CMOS-Sensor Light-Sensitive Surface under Gamma-Irradiation

Cited by 6 publications

References 14 publications

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

General Issues of Gate-Level Simulation and Optimization of Digital Circuits with Consideration of Destabilizing Factors

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