Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Rizzolo, Serena; Goiffon, Vincent; Sergent, Marius; Corbière, Franck; Rolando, Sébastien; Chabane, Aziouz; Paillet, Philippe; Marcandella, Claude; Girard, Sylvain; Magnan, Pierre; Uffelen, Marco Van; Casellas, Laura Mont; Scott, Robert W. J.; Cock, Wouter De

doi:10.1109/radecs.2017.8696140

Cited by 4 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The comparison between the two images points out that after irradiation, the sensor from foundry B exhibits a strong nonuniformity. This nonuniformity is not linked to MOSFETs' threshold voltage shift variability as in the case reported in [18] for foundry C. Indeed, the electrical transfer function measurements do not show nonuniformities. The causes of the nonuniformity of Fig.…”

Section: B Tid-induced Dark Current Increasementioning

confidence: 63%

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Rizzolo

Goiffon

Corbière

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partially pinned PHDs at moderate-to-high TIDs is evaluated for the first time to our knowledge (PHD stands for "photodiode"). It is shown that the 3T-standard partially pinned PHD has the lowest dark current before irradiation, but its dark current increases to ∼1 pA at 10 kGy(SiO 2). Beyond 10 kGy(SiO 2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation-induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8-V MOSFETs exhibit the lower threshold voltage shift, and the nMOSFETs are the most radiation tolerant. Among all the tested devices, 1.8-V sensors achieve the best dark current performance. Several radiationhardening-by-design solutions are evaluated at the MGy level to improve further the understanding of CIS radiation hardening at extreme TID.

show abstract

Section: B Tid-induced Dark Current Increasementioning

confidence: 63%

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Rizzolo

Goiffon

Corbière

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The ETF is the output voltage of the readout chain as a function of the Reset voltage (VRSt) applied on the PD sense node. As discussed in [12], it allows having a first approximation of the readout circuit's degradation. The ETF evolution, after 2 MGy(SiO2) irradiation and annealing, is presented in Fig.…”

Section: Radiation Effects On the Cis Electronicsmentioning

confidence: 99%

“…To further investigate this phenomenon and since it seems unlikely that the numerical transistor of the readout chain could introduce this effect, a deeper analysis has been performed on the analog transistors of the electronics. The readout chain (for which the complete description is given in [12]) is composed of four models of analog transistors; Two models of bias transistor (N and P) and two models of source follower (both N), each of them present at multiple places in the readout chain. It is possible to measure the bias transistors, and none of them seems to have been particularly affected by the annealing steps around 200°C -i.e., their I-V characteristics is almost the same for the range of temperature 175 to 250°C.…”

Section: Radiation Effects On the Cis Electronicsmentioning

confidence: 99%

Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

Dewitte

Rizzolo

Paillet

et al. 2020

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Capabilities of rad-hard electronics are often degraded by post-irradiation annealing, whose effects need to be considered in designing complex systems, such as CMOS image sensors. In particular, the commonly accepted behavior of annealing cannot be systematically assumed, because reverse annealing does not necessarily come from the degradation of the defects, but could be the result of defects annealing non-uniformities. This paper provides an extensive study of the dark current and pixel readout electronic behavior of CMOS image sensors during irradiation and annealing, in order to provide some insights on these annealing non-uniformities. The isochronal annealing performed up to 300°C demonstrates that, up until a certain temperature, reverse annealing is almost always present, but the 300°C annealing always heals the system very efficiently. When performed on specially designed gated pixels for ultra-high dose applications, adding a N+ drain further mitigates the radiation effects along with the reverse annealing. This proves the efficiency of these rad-hard designs and calls for further research in this radiation hardening direction.

show abstract

Reconstructing JET using LIDAR-Vision fusion

Jonasson

Boeuf

Kyberd

et al. 2019

Fusion Engineering and Design

View full text Add to dashboard Cite

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

Abstract: Abstract-MOSFETs variability in irradiated CIS up to 10 MGy(SiO 2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.

Cited by 4 publications

References 11 publications

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

Reconstructing JET using LIDAR-Vision fusion

Contact Info

Product

Resources

About