Investigation of NiO x -based contacts on p-GaN

, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N 2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer.K e y

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Liday¹,

Vogrinčič²,

Vretenár³

et al. 2013

“…Nevertheless, the Au/Ni/p-GaN [2][3][4][5] structure seems to be the most suitable thanks to relatively good values of the specific contact resistance and optical transparency. By examining the effect of a NiO x layer with a low concentration of oxygen upon the electrical properties of Au/NiO x /p-GaN ohmic contacts [6] it was found that a low-resistance ohmic contact was achieved by Au/NiO x layers deposited by reactive magnetron sputtering and annealed not only in oxygen but also in nitrogen. Both annealing modes lead to reconstruction of the contact structure into a metal/p-NiO/p-GaN structure.…”

Section: Introductionmentioning

confidence: 99%

Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials

Liday

Vogrinčič

Vretenár

et al. 2015

We have designed and verified a new structure for ohmic contacts to p-GaN based on a layer of carbon nanotubes (CNT), reduced graphene oxide (r-GO) and metallic layers of Cr, Pd and Au, namely in configurations Au/Cr/r-GO/CNT/p-GaN and Au/Pd/r-GO/CNT/p-GaN. The effects have been studied of the annealing temperature and the gas ambient upon the electrical properties of the contacts. Annealing of the Au/Pd/r-GO/CNT/p-GaN structure in air at 500 • C for 1 minute resulted in linear I − V curves measured between planar electrodes on the p-GaN. Hence, addition of r-GO to the CNT interlayer between p-GaN and the metallization layer is a highly promising procedure for further improvements of the ohmic contacts to p-GaN.

“…Promising results were reached examining the effect of a NiOx layer with a low concentration of oxygen upon the electrical properties of ohmic contacts Au/NiOx/p-GaN [18]. It was found that a low-resistance ohmic contact was provided by Au/NiOx layers deposited by reactive magnetron sputtering and annealed not only in oxygen but also in nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Liday¹,

Vogrinčič²,

Vretenár³

et al. 2013

We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.