Investigation of microstructure and properties of magnetron sputtered Zr-Si-N thin films with different Si content

Neto, P.C. Silva; Freitas, Flávio Gustavo Ribeiro; Ramirez, D. A.; Carvalho, Renata Gomes; Felix, Levi C.; Terto, A.R.; Hübler, Roberto; Mendes, Fernanda de Souza Nogueira Sardinha; Silva, A.H.; Tentardini, E.K.

doi:10.1016/j.surfcoat.2018.07.106

Cited by 18 publications

(13 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 11a presents the relationship between H 3 /E* 2 and H , which includes some data from previous studies on Zr–Si–N films [5,19]. Silva Neto et al [42] reported that the hardness and H 3 /E 2 ratio exhibited an increasing trend for the DCMS- and RFMS-cosputtered Zr–Si–N films, and a maximum H 3 /E 2 value of 0.40 GPa was accompanied with a hardness of 20.6 GPa. In our previous study [5], DCMS-fabricated Zr–Si–N films prepared without applying a bias voltage exhibited a low H 3 /E* 2 level of <0.15 GPa ( H 3 /E 2 < 0.18 GPa).…”

Section: Resultsmentioning

confidence: 95%

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

View full text Add to dashboard Cite

Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H3/E*2 level of 0.21–0.39 GPa, and an elastic recovery of 62–72%.

show abstract

Section: Resultsmentioning

confidence: 95%

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

View full text Add to dashboard Cite

show abstract

“…It has been found that when the solubility limit of Si in MeN lattice is exceeded, the Si atoms form a Si 3 N 4 phase [94]. The formation of Si 3 N 4 phase into MeN grain boundaries is typical for the Me▬Si▬N systems [17,19,25,41,71,73]. Therefore, in our case, a chemical analysis for XPS of the ZrN▬Si deposited films with different Si contents was carried out to show the formation of the Si 3 N 4 phase with the Si addition.…”

Section: Chemical Characterization By Means Of Spectroscopy Of the X-mentioning

confidence: 99%

“…Various works have shown that the Si exists as solid solution in the ZrN lattice up to 3.0 at.%, but when the Si content increases, the formation of the Si 3 N 4 phase is observed [17,21]. Therefore, the EDX and XPS results show that with a Si content of 8 at.%, the solubility limit of Si in ZrN lattice is exceeded, generating the formation of Si 3 N 4 into ZrN grain boundaries with the increased Si content, probability of the volume of the phase of Si 3 N 4 is increased, and the phase of ZrN is decreased.…”

Section: Chemical Characterization By Means Of Spectroscopy Of the X-mentioning

confidence: 99%

“…Among all these compounds, we find that the transition metal nitrides (MeN) have been widely used in mechanical applications due to their high hardness and wear resistance [2,[13][14][15][16]. However, it has been found that the addition of a third element may improve the physical and chemical properties of MeN due to a change that this new element generates in the microstructure of these materials [1,[17][18][19][20][21][22][23][24][25][26][27][28][29][30]. These structures are called nanocomposite, and there are two different groups of hard nanocomposite films, for instance: (i) crystalline/amorphous nanocomposites and (ii) crystalline/crystalline nanocomposites.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Silicon Content in Functional Properties of Thin Films

Vanegas¹,

Alfonso²,

Olaya³

2019

Silicon Materials

View full text Add to dashboard Cite

Silicon (Si) has been the paradigm of the electronic industry, because it has been used in fabrication of different electronic circuit elements such as diodes, operational amplifiers, transistors, and in the last few decades, it has been the base material of the development of solar energy industry. However, other research fields in which the physical and chemical properties of Si have demonstrated to be relevant to applications in areas such as the mechanical, optical, electrical, and electrochemical are less known. Therefore, it is relevant to know the technology that has generated materials with new or better physical and chemical properties, such as the nanocomposite materials that have been growing in thin films. These films exhibiting new properties with respect to the bulk material and with the addition of Si, have demonstrated to improve the properties of the transition metal nitride (MeN), obtaining thin films with a high nanohardness, wear resistance, corrosion resistance, and high thermal stability. Therefore, the main objective of this chapter is to know the role that plays the incorporation Si in growth, microstructure, chemical composition, and functional properties of ZrN thin films.

show abstract

“…However, mononitride films often lose their protective role in such severe conditions. For example, TiN and ZrN coatings deposited by reactive magnetron sputtering are intensively oxidized at the temperatures of 500-600 • C [4][5][6][7]. This is related to their columnar microstructure and presence of defects (e.g., porosity or micro-cracks), which allows a direct contact between the external atmosphere and substrate and accelerates oxygen incorporation through grain boundary diffusion.…”

Section: Introductionmentioning

confidence: 99%

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

et al. 2020

View full text Add to dashboard Cite

In the present work, the structure, stress state and phase composition of MeN/SiNx (Me = Zr, Cr, Al) multilayered films with the thickness of elementary layers in nanoscale range, as well as their stability to high temperature oxidation, were studied. Monolithic (reference) and multilayered films were deposited on Si substrates at the temperatures of 300 °C (ZrN/SiNx and AlN/SiNx systems) or 450 °C (CrN/SiNx) by reactive magnetron sputtering. The thickness ratios of MeN to SiNx were 5 nm/2 nm, 5 nm/5 nm, 5 nm/10 nm and 2 nm/5 nm. Transmission electron microscopy (TEM), X-ray Reflectivity (XRR) and X-ray Diffraction (XRD) testified to the uniform alternation of MeN and SiNx layers with sharp interlayer boundaries. It was observed that MeN sublayers have a nanocrystalline structure with (001) preferred orientation at 5 nm, but are X-ray amorphous at 2 nm, while SiNx sublayers are always X-ray amorphous. The stability of the coatings to oxidation was investigated by in situ XRD analysis (at the temperature range of 400–950 °C) along with the methods of wavelength-dispersive X-ray spectroscopy (WDS) and scanning electron microscopy (SEM) after air annealing procedure. Reference ZrN and CrN films started to oxidize at the temperatures of 550 and 700 °C, respectively, while the AlN reference film was thermally stable up to 950 °C. Compared to reference monolithic films, MeN/SiNx multilayers have an improved oxidation resistance (onset of oxidation is shifted by more than 200 °C), and the performance is enhanced with increasing fraction of SiNx layer thickness. Overall, CrN/SiNx and AlN/SiNx multilayered films are characterized by noticeably higher resistance to oxidation as compared to ZrN/SiNx multilayers, the best performance being obtained for CrN/SiNx and AlN/SiNx with 5 nm/5 nm and 5 nm/10 nm periods, which remain stable at least up to 950 °C.

show abstract

Investigation of microstructure and properties of magnetron sputtered Zr-Si-N thin films with different Si content

Cited by 18 publications

References 53 publications

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effect of Silicon Content in Functional Properties of Thin Films

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

Contact Info

Product

Resources

About