Investigation of influence of DX centres on HEMT operation at room temperature

Godts, P.; Constant, E.; Zimmermann, J.; Depreeuw, D.

doi:10.1049/el:19880638

Electron. Lett.

1988

DOI: 10.1049/el:19880638

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Investigation of influence of DX centres on HEMT operation at room temperature

P. Godts

E. Constant

J. Zimmermann

et al.

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1989

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Cited by 8 publications

(1 citation statement)

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“…In AlGaAs/GaAs HEMT's, two-dimensional electron gas (2DEG) formed at the AlGaAs/GaAs heterointerface is used as a channel. DX centers have a large influence on the electron transfer between AlGaAs and GaAs layers [7]- [9], resulting in the saturation in sheet carrier density of 2DEG [ 101. Therefore, it is important to suppress the influence of DX centers in order to obtain further improvement in AlGaAs / GaAs HEMT performance.…”

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confidence: 99%

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Mizuta

Yamaguchi

Yamane

et al. 1989

IEEE Trans. Electron Devices

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Abstract-Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of AlGaAs/GaAs HEMT's in a high gate-bias region is caused by the existence of DX centers. This is because the Fermi level is pinned at deep donor levels in the n-AIGaAs layer. Furthermore, the superiority of AlGaAs/InGaAs pseudomorphic HEMT's is discussed in terms of the Fermi-level pinning.

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confidence: 99%

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Mizuta

Yamaguchi

Yamane

et al. 1989

IEEE Trans. Electron Devices

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Caractéristiques électriques de transistors à mobilité électronique élevée utilisant des superréseaux AlAs-GaAs de type N et fabriqués á I’aide de procédés laser

Belhadj¹,

Dumas²,

Christou

et al. 1990

Ann. Télécommun.

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Effects of low energy Ar+ ion bombardment on GaAs

Vaseashta

Elshabini-Riad

Burton

1991

Materials Science and Engineering: B

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Investigation of influence of DX centres on HEMT operation at room temperature

Cited by 8 publications

References 3 publications

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Caractéristiques électriques de transistors à mobilité électronique élevée utilisant des superréseaux AlAs-GaAs de type N et fabriqués á I’aide de procédés laser

Effects of low energy Ar+ ion bombardment on GaAs

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