Effects of low energy Ar+ ion bombardment on GaAs

Vaseashta, Ashok; Elshabini-Riad, A.; Burton, L. C.

doi:10.1016/0921-5107(91)90079-b

Cited by 2 publications

(2 citation statements)

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“…Using deep level transient spectroscopy (DLTS) [6], Grussell et al [7] have shown that the barrier lowering observed for n-Si is due to the introduction of donor-like defects below the interface. Subsequently, electrically active defects were also observed in ion beam processed GaAs [8,9]. The degree of barrier modification was found to increase with increasing defect concentration [9], which in turn is determined by the energy and fluence of ions.…”

Section: Introductionmentioning

confidence: 98%

“…Although the electronic properties of numerous defects introduced during low energy Ar- [8,9] and He-ion [11] bombardment of GaAs have been reported, the physical nature of most of these defects is still unknown. Moreover, the type and concentration of these defects have not been correlated with the bombarding ion species and impurities in GaAs.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs

et al. 1996

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We report the results of experiments during which epitaxially grown n-GaAs was exposed to He-and SiC1 4 -plasmas at similar sets of well defined RF powers and plasma pressures. To study the defects introduced during these plasma exposured, we employed deep level transient spectroscopy (DLTS). The effect of the plasma etch induced defects on the performance of Schottky barrier diodes (SBDs) fabricated on plasma processed GaAs was evaluated by currentvoltage (IV) and capacitance-voltage (CV) measurements.DLTS revealed that each plasma type (He and SiC1 4 ) introduced its own characteristic set of defects. Some of the defects created during He processing and one defect introduced by SiC1 4 etching had identical electronic properties to those introduced during high energy (MeV) He ion bombardment. SiC1 4 etching introduced only two prominent defects, one of which is metastable with electronic properties similar to a metastable defect previously reported in high and low energy He-ion bombardment of Si-doped GaAs. IV measurements demonstrated that the characteristics of SBDs fabricated on He-ion processed surfaces were very poor compared to those of control diodes (diodes fabricated on surfaces cleaned by conventional wet etching). In contrast, the properties of SBDs fabricated on SiC1 4 etched surfaces were as good as, and in some cases superior to, those of control diodes. SBDs fabricated on annealed (at 450 'C for 30 minutes) He-processed samples exhibited improved but still poor rectification. In contrast, SBDs fabricated on annealed SiCl 4 etched surfaces had virtually the same characteristics as those fabricated on unannealed SiC1 4 etched samples. (a) Electronic

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%