2021
DOI: 10.1016/j.seppur.2021.119659
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Investigation of indium and other valuable metals leaching from unground waste LCD screens by organic and inorganic acid leaching

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Cited by 27 publications
(3 citation statements)
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“…The formation of NO and O 2 is also likely. It has also been proved experimentally from other researchers that leaching of In from ITO using HNO 3 is possible [44][45][46].…”
Section: Fig 4 (Continued)mentioning
confidence: 82%
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“…The formation of NO and O 2 is also likely. It has also been proved experimentally from other researchers that leaching of In from ITO using HNO 3 is possible [44][45][46].…”
Section: Fig 4 (Continued)mentioning
confidence: 82%
“…The ΔG values of the possible reactions of In 2 O 3 with nitric acid (Table S2 Eqs. [43][44][45][46] suggest that they can react towards formation of indium nitrate, water and/or indium hydroxide. The formation of NO and O 2 is also likely.…”
Section: Fig 4 (Continued)mentioning
confidence: 99%
“…In the metal leaching efficiency diagrams (Figures S1-S3), there is no obvious difference in the leaching ability of metal oxide between HNO3 and HCl, except for the leaching rate of silicon. Due to the strong oxidizing property of HNO3, it had a stronger ability to modify the carbon surface [37]. RLE of H2SO4 was worse than that of HNO3 and HCl.…”
Section: 𝐻 + 𝑋 𝑆𝑖𝑂 → 𝐻 𝑂 + 𝐻 𝑆𝑖𝑂 + 𝑋 (15)mentioning
confidence: 98%