Investigation of In_xGa_1−xAs films grown from thin solution layer

Abstract

In,Gal-,As films with x 5 0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750" and 700 "C were determined.The morphology of the film surface was investigated as a function of liquid phase composition and (IOO), (1 11) A, (1 11) €3 substrate orientations. Dislocation density increases from lo4 cm-a to lo7 cm-2 with change of x from 0 to 0.12.