Investigation of growth and characterization of nanostructured CuIn5S8 thin films produced by glancing angle deposition

Sinaoui, A.; Chaffar-Akkari, Ferid; Gallas, Bruno; Demaille, Dominique; Kanzari, M.

doi:10.1016/j.tsf.2015.07.074

Cited by 14 publications

(4 citation statements)

References 45 publications

(19 reference statements)

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“…One can site the gas sensors as an example. Moreover, by governing the freedom's degrees of the substrate, it is possible to perform several shapes by the GLAD technique, such as vertical columns [5], helical [6], zigzag shapes [7], U-shaped resonators [8], and even three-armed square nanospirals [9] .…”

Section: Introductionmentioning

confidence: 99%

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Abdelkader

Akkari

Khémiri

et al. 2018

Physica B: Condensed Matter

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(SnS) m (Sb 2 S 3) n thin films were prepared by thermal evaporation using the glancing angle deposition technique (GLAD). The incident angle between the particle flux and the normal to the substrate was fixed at 80°. The Raman and XRD characterization revealed the amorphous character of the films due to the columnar structure as shown by the SEM characterization and AFM analysis. A strong change of the surface morphology of the films was observed and it depends on the composition. Optical properties were extracted from transmittance T and reflectance R spectra. (SnS) m (Sb 2 S 3) n thin films exhibit high absorption coefficients (10 4-2×10 5 cm-1) in the visible range and the higher values were obtained for Sn 3 Sb 2 S 6 and it has the highest photocurrent values. The direct band gap (E g dir) was in the range 2.11-1.67 eV. The refractive indices are calculated from optical transmittance spectra of the films. The Sn 3 Sb 2 S 6 sample exhibits a lower refractive index. All the dispersion curves of refractive index match well with the Cauchy dispersion formula and they were analyzed using Wemple-DiDomenico model. The Bruggeman effective medium approximation EMA was used to calculate the packing density of different compositions, and SnSb 4 S 7 sample has the highest

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Section: Introductionmentioning

confidence: 99%

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Abdelkader

Akkari

Khémiri

et al. 2018

Physica B: Condensed Matter

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“…This ternary semiconductors family due to their flexibility in electrical and optical properties can be used as photo‐absorbing materials in optoelectronic devices 9 . It was investigated in References 10–13 that these semiconductors having suitable band gaps matching with solar spectrum, are considered to be an ideal choice for photo‐electrochemical and photovoltaic cells due to its high absorption coefficient and good photo‐stability 14 …”

Section: Introductionmentioning

confidence: 99%

“…9 It was investigated in References 10-13 that these semiconductors having suitable band gaps matching with solar spectrum, are considered to be an ideal choice for photo-electrochemical and photovoltaic cells due to its high absorption coefficient and good photo-stability. 14 The ternary semi-conductor family AB 5 C 8 (A = Cu or Ag, B = In and C = S, Se or Te) is one of the most important representative among the ternary semi-conductors. These ternary semiconductors are mostly visible-light active materials which have recently gained significant interest due to appropriate band gaps, high absorption coefficients, inter-conversion between P-and N-type carrier types as well as in manufacturing of comparatively cheap homo and hetero junction structures.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

et al. 2020

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Summary Ternary semiconductors AB5C8 (A = Cu/Ag, B = In and C = S, Se or Te) have been investigated. The CuIn5S8 and AgIn5S8 have been synthesize in cubic spinel structure with space group (Fd3m), whereas CuIn5Se8, AgIn5Se8, CuIn5Te8 and AgIn5Te8 have tetragonal structures with space group P‐42m. The relaxed crystal geometry, electrical properties such as electronic band structure and optoelectronic properties are predicted by using full potential method in this work. For the determination of relaxed crystal geometry, the gradient approximation (PBE‐GGA) is used. All the studied compounds are semiconductors based on their band structures in agreement with the experimental results, and their bulk moduli are in the range 35 to 69 GPa. Wide absorption peaks appeared in the visible to ultraviolet energy region indicating good absorption ability of these compounds. Therefore, these semiconductors are an excellent choice for optical devices, electrochemical and photovoltaic cells. These compounds have remarkable characteristics such as direct as well as indirect band gaps with very slight difference between the two, high absorption coefficient, good photo‐stability, easy inter‐conversion between n‐ and p‐type semiconductors and in manufacturing of comparatively cheap homo and hetero junction structures. AB5C8 (A = Cu/Ag; B = In and C = S, Se, Te) compounds have shown high absorption and optical conductivity in the visible region. These compounds have therefore high potential to be used as solar energy harvesting. Also these systems are optical active in the ultraviolet region too therefore can be used for high frequency optoelectronics applications.

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“…This technique is a physical vapor deposition (PVD) process that is implemented by oblique angle deposition and/or substrate rotation in front of the deposition source to control the column orientation and porosity of nanostructured films [3,4]. The GLAD technique has been shown to be capable of thin films elaboration with a wide variety of microstructures, such as vertical columns [5], helical [6], and zigzag shapes [7], which is hardly obtained from the normal incidence vapor deposition [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

et al. 2018

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In this work, Cu x O thin films were obtained by air annealing of copper thin films deposited on glass substrates using thermal evaporation method by Glancing Angle Deposition "GLAD" technique. The copper was sculptured into a zigzag shape, which presents two columns with inclined angles + and-where is the deposition angle between the incident flux and the substrate normal. Morphological, structural, optical and electrical properties of the obtained thin films were investigated using X-ray diffraction (XRD), UV-Vis-NIR Spectroscopy and electrical resistivity measurements. The XRD patterns revealed that thin films deposited at different incident angles are mainly crystallized in Cu 2 O cubic phase characterized by the preferential orientation along (111) plane. The optical parameters were calculated from the analysis of the transmittance and reflectance spectra in the wavelength range 300-1800 nm. Theabsorptioncoefficient exceeds 10 5 cm-1 in the visible and NIR spectral ranges. Direct band gap energy increases from 2 to 2.54 eV with deposition angle. The in-plane birefringence and the anisotropic resistivity of the Cu 2 O films were also studied. Their maxima were obtained at incident flux angle of = 60°. Therefore, the GLAD technique is a promising way to create zigzag nanostructures with enhanced anisotropic properties.

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Investigation of growth and characterization of nanostructured CuIn5S8 thin films produced by glancing angle deposition

Cited by 14 publications

References 45 publications

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

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Investigation of growth and characterization of nanostructured CuIn5S8 thin films produced by glancing angle deposition

Cited by 14 publications

References 45 publications

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Effect of SnS addition on the morphological and optical properties of (SnS)m(Sb2S3)n nano-rods elaborated by glancing angle deposition

Structural, electronic and optoelectronic properties of AB 5 C 8 ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

Effect of angle deposition γ on the structural, optical and electrical properties of copper oxide zigzag (+γ, −γ) nanostructures elaborated by glancing angle deposition

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Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds