Investigation of generation processes at the SiO2/HgCdTe interface by gate controlled diodes

Rosbeck, J. P.; Blazejewski, E. R.

doi:10.1116/1.573240

Cited by 14 publications

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“…A similar effect has been observed in gated HgCdTe photodiodes. 15 The flatband voltage shift from a device without an anneal to a device annealed at 400 C is 3.55 V. Assuming that this shift is entirely due to a change in the fixed charge, DQ f , this corresponds to a DQ f ¼ C ox * DV FB ¼ 1.5 Â 10 12 cm À2 . Similar shifts in the flatband voltage were seen when capacitors were annealed at 400 C in forming gas and in vacuum, suggesting that the primary cause of the shift is temperature and not annealing ambient.…”

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Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

DiLello¹,

Hoyt²

2011

Applied Physics Letters

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Ge-on-Si photodiodes were fabricated from epitaxial germanium films grown by low-pressure chemical vapor deposition. These vertical p-i-n diodes were passivated with SiO2 deposited by chemical vapor deposition. It is found that the incorporation of a post-metallization anneal reduces the dark current by 1000X for small-area devices, with 10 × 10 μm diodes exhibiting a dark current of 8 nA at −1 V. Metal-oxide-semiconductor capacitors were also fabricated using the same materials and annealing conditions. Capacitance-voltage measurements indicate that the anneal changes the surface condition of the germanium from depletion to accumulation, lowering the photodiode perimeter leakage current.

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confidence: 99%

Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

DiLello¹,

Hoyt²

2011

Applied Physics Letters

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“…The value R SCR A d is determined by the processes of generation, including tunneling, of minority charge carriers through deep layers in the SCR and through surface states at the dielectric -semiconductor interface, by diffusion of the minority charge carriers from a quasi-neutral volume, and by background photogeneration. The main mechanisms for limitation of the SCR differential resistance have already been experimentally studied for MIS structures based on bulk HgCdTe in [4,[9][10][11][12][13].…”

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Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

2009

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621.315The effect of graded-band-gap layers on the differential resistance of space-charge region in MIS structures based on MBE HgCdTe (x = 0.225) is examined. It is shown that the effect of resistance of the epitaxial-film bulk on the measured capacitance and resistance should be taken into account for correct determination of space-charge region parameters. The presence of near-surface layers with increased Cd contents results in an increase in the resistance of the space-charge region in strong inversion. The product of semiconductor resistance by area as high as 15 Ω⋅cm 2 is obtained despite suppression of tunnel generation-recombination through deep levels in MIS structures with graded-band-gap layers. This might be due to background photogeneration and diffusion of minority charge carriers. The mechanisms for limitation of the differential resistance of space-charge region at different temperatures are discussed for n-HgCdTe (x = 0.225 and 0.292) and p-HgCdTe (x = 0.225). IN RODUCTIONMolecular-beam epitaxy (MBE) of Hg 1-x Cd x Te allows growing hetero-epitaxial structures with the specified indepth distribution of composition, which in turn makes it possible to further optimize the characteristics of infrared detectors. Near-surface layers with enhanced content of Cd decrease the effect of surface recombination on the chargecarrier lifetime in the epitaxial film bulk [1]. Examination of electrical characteristics of MIS structures based on graded-band-gap MBE HgCdTe is necessary for evaluation of the quality of passivating coatings as well as for development of monolithic IR detector arrays. The conventional methods for studying electrical characteristics of MIS structures are designed for semiconductors uniform in depth and cannot be applied to characterization of MIS structures based on graded-band-gap semiconductors in the same form. When examining the properties of MIS structures based on graded-band-gap MBE HgCdTe, one should take into account the resistance of epitaxial film bulk [2] and near-surface graded-band-gap layers [3]. The conductance of MIS structures in strong inversion provides information on the differential resistance of space-charge region (SCR) which determines the rate of recombination of minority carriers in the SCR. The product of the SCR differential resistance and the area (R SCR A d ) is the most important characteristic of MIS photodiodes [4,5] as well as photodiodes where the p-n transition is generated by doping [6,7]. Thus, in [4], for bulk HgCdTe of composition 0.22 the maximum value of those cited in literature R SCR A d = 120 Ω⋅cm 2 at 77 K is listed, whereas in [8], for epitaxial HgCdTe with composition 0.223 without a near-surface graded-band-gap layer, the values

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Structure and Electrical Characteristics of Metal/MCT Interfaces

Westerhout¹,

Sewell²,

Dell³

et al. 2010

Mercury Cadmium Telluride

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Investigation of generation processes at the SiO2/HgCdTe interface by gate controlled diodes

Cited by 14 publications

References 0 publications

Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

Structure and Electrical Characteristics of Metal/MCT Interfaces

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