Investigation of ESD Protection in SiC BCD Process

Lai, Pengyu; Wang, Hui; Abbasi, Affan; Roy, Sajib; Rashid, Arman Ur; Mantooth, Alan; Zhong, Chen

doi:10.1109/wipda46397.2019.8998959

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…Consequently, several engineers select the SCR and LIGBT as high-voltage ESD protection devices, and various studies have been conducted to optimize their electrical characteristics [15]- [17]. However, because the critical electric field (E C ) is significantly high compared to the forward voltage drop in 4H-SiC, a strong snapback phenomenon occurs [18], [19]. In this snapback phenomenon, the difference between the trigger and holding voltages becomes larger than when silicon is used for fabrication.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Jin

Lee

et al. 2021

IEEE J. Electron Devices Soc.

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4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide range of snapback phenomena is triggered for 4H-SiC-based ESD protection devices owing to a high critical electric field. In this study, an ESD protection device based on a lateral insulated-gate bipolar transistor (LIGBT) with a new structure that creates an internal silicon-controlled rectifier (SCR) path is proposed. The proposed ESD protection device minimizes the effective base region of the NPN parasitic bipolar transistor to the gate length based on the internal SCR operation of the LIGBT. It also adjusts the emitter injection efficiency of the PNP parasitic bipolar transistor by introducing a segment topology and inserting an additional implant area. Consequently, the proposed ESD protection device significantly improves the wide range of snapback phenomena occurring in the 4H-SiC materials. A conventional SCR, the LIGBT, and the proposed protection device were fabricated using the 4H-SiC process under the same condition, and their electrical characteristics were comparatively analyzed using a transmission-line pulse system. Moreover, its high-temperature reliability was evaluated at 300-500 K to examine the compatibility with 4H-SiC devices and circuits that require a relatively high-temperature operation.INDEX TERMS Electrostatic discharge, holding voltage, snapback, silicon-controlled rectifier, lateral insulated-gate bipolar transistor.

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Section: Introductionmentioning

confidence: 99%

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Jin

Lee

et al. 2021

IEEE J. Electron Devices Soc.

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“…Despite the importance of this issue, few studies on SiC ESD protection have been published thus far. Recently, the failure mechanisms of SiC devices for human body model ESD pulses were investigated, and the electrical characteristics of traditional ESD protection devices fabricated with SiC materials were analyzed [10], [11]. Among these typical ESD protection devices, many engineers prefer the silicon-controlled rectifier (SCR) owing to its high current density.…”

mentioning

confidence: 99%

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Lee

Kim

et al. 2020

IEEE Electron Device Lett.

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In this letter, a new silicon-controlled rectifier (SCR) structure fabricated using 4H-SiC materials has been proposed and investigated. The proposed structure alleviates the strong-snapback phenomenon that occurs in the 4H-SiC SCR and demonstrates low trigger voltage and high holding voltage characteristics. The proposed device exhibits improved snapback characteristics with very high holding voltage against electrostatic discharge surges owing to the structural features and application of segment topology. It also has excellent on-resistance and improved thermal reliability owing to the physical characteristics of 4H-SiC. Traditional SCR and low-voltage trigger SCR (LVTSCR) are fabricated with 4H-SiC under the same conditions and their electrical characteristics are comparatively analyzed with those of the proposed SCR. This study also evaluates the electrical characteristics at high temperatures (300-500 K) to verify the high-temperature reliability of the proposed structure.

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Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

Lee¹,

Park²,

Bae³

et al. 2023

2023 7th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM)

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Investigation of ESD Protection in SiC BCD Process

Cited by 5 publications

References 19 publications

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

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