2005
DOI: 10.1149/1.1883868
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Investigation of Dopant Effects in CoSi2 and NiSi Fully Silicided Metal Gates

Abstract: CoSi 2 full silicidation ͑FUSI͒ of doped poly-Si metal gates was investigated to further the understanding of the modulation of effective work function from dopants in CoSi 2 and NiSi FUSI gated metal oxide semiconductor devices. By using a TiN-capping layer to manipulate the dopant distribution, dopants have been confirmed to be effective in tuning the work function for both CoSi 2 and NiSi. However, from the drastic reduction of the As tuning effect in CoSi 2 , we understand that the amount of effective work… Show more

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Cited by 5 publications
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“…With respect to silicide materials for FUSI gates, most of the ones explored so far are common silicides that are already in use for source/drain contacts or other microelectronics processes, such as molybdenum silicides [119,120,138], tungsten silicides [122], titanium silicides [136], hafnium silicides [134], platinum silicides [131,133], cobalt silicides [123,141] and nickel silicides [21,121,, germanides, and alloys. Nickel-based silicide materials are emerging as a leading candidate for FUSI gates for several reasons: 1) low resistivity (;15 -25 lX-cm; 2) low volume expansion (less than 20%); and 3) the fact that this material has already been introduced into Si FEOL processing for sub-90-nmtechnology nodes.…”
Section: Figure 12mentioning
confidence: 99%
“…With respect to silicide materials for FUSI gates, most of the ones explored so far are common silicides that are already in use for source/drain contacts or other microelectronics processes, such as molybdenum silicides [119,120,138], tungsten silicides [122], titanium silicides [136], hafnium silicides [134], platinum silicides [131,133], cobalt silicides [123,141] and nickel silicides [21,121,, germanides, and alloys. Nickel-based silicide materials are emerging as a leading candidate for FUSI gates for several reasons: 1) low resistivity (;15 -25 lX-cm; 2) low volume expansion (less than 20%); and 3) the fact that this material has already been introduced into Si FEOL processing for sub-90-nmtechnology nodes.…”
Section: Figure 12mentioning
confidence: 99%