Investigation of deposition temperature effect on properties of PECVD SiOCH low-k films

Wong, Terence Kin Shun; Liu, B.; Narayanan, B Sabarish; Ligatchev, V.; Kumar, R.

doi:10.1016/j.tsf.2004.05.048

Cited by 49 publications

(21 citation statements)

References 19 publications

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“…Deposition of organosilicon films at ambient temperature generally leads to more organic films and this is, in principle, interesting for applications as low‐ k dielectrics. However, quite large amounts of SiOH and SiH groups are also incorporated in the deposited film, which contribute to increase the k value 9, 21. Beside this, in some cases, these functional groups are not completely removed during annealing and therefore, despite the beneficial effect of organic moieties, the dielectric constant remains equal or even higher than that obtained for films deposited at higher temperatures.…”

Section: Resultsmentioning

confidence: 99%

A Chemical Study of Plasma‐Deposited Organosilicon Thin Films as Low‐k Dielectrics

Coclite

Milella

Palumbo

et al. 2009

Plasma Processes & Polymers

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Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited thickness loss of 6% upon thermal annealing at 400 8C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (150 8C) during deposition ensured the best balance between very low permittivities and good thermal stability.

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Section: Resultsmentioning

confidence: 99%

A Chemical Study of Plasma‐Deposited Organosilicon Thin Films as Low‐k Dielectrics

Coclite

Milella

Palumbo

et al. 2009

Plasma Processes & Polymers

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show abstract

“…The observed dip in Figure 2(a) at 20 W is formed by the abnormal high values at another deposition power. The refractive index data in Figure 2(a) are lowest at 20 W. It is well known that a lower density film is expected to demonstrate lower refractive index 19. The reason for decreased refractive index and dielectric constant is that the polarizations of carbon‐related bonds are less than silicon or oxygen‐related bonds.…”

Section: Resultsmentioning

confidence: 97%

Organic and Inorganic Hybrid-Polymer Thin Films by PECVD Method and Characterization of Their Electrical and Optical Properties

Bae

Cho

Jeong

et al. 2007

Plasma Process. Polym.

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Organic–inorganic hybrid polymer‐like thin films have been deposited on glass and silicon substrates by plasma‐enhanced chemical vapor deposition (PECVD) method using single molecular precursors of the organic–inorganic hybrid polymers. Methylcyclohexane and tetraethylorthosilicate (TEOS) were utilized as organic and inorganic precursors, and hydrogen and Ar (argon) were used as bubbler and carrier gases, respectively. In order to compare the difference between the optical, electrical, and mechanical properties of the plasma polymerized thin films, we grew the hybrid polymer‐like thin films under the conditions of various radio frequency (RF; using 13.56 MHz) powers in the range of 20–50 W with the annealing temperature of grown thin films in the range 200–500 °C. The as‐grown polymerized thin films were in first analyzed by FT‐IR, C–V, ellipsometry, and nanoindentation. The result of FT‐IR showed that the plasma polymerized thin films have highly cross‐linked density with increasing RF power and annealing temperature. Impedance analyzer was utilized for the measurements of C–V curves. From the electrical property measurements, the lowest dielectric constant was obtained to be 2.22.

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“…This is also confirmed by the relatively stable ratio of (Si-CH 3 + CH x )/Si-O for different annealing temperatures (i.e., 3.0% to 3.4%), as deduced from the corresponding peak areas in FTIR, as shown in Table I. In general, the absorption peak in the range of 1300 cm À1 to 950 cm À1 is usually used to define the relative concentrations of various Si-O bonding configurations such as Si-O-Si cage and network etc. [20][21][22] Therefore, in the present work, the wide 20,21 According to the areas of the fitted subpeaks, the relative concentrations of all the components were calculated, as presented in Fig. 5.…”

Section: Ftir Analyses Of the Filmsmentioning

confidence: 99%

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

Qian

Zhang

2011

Journal of Elec Materi

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Ultralow-dielectric-constant (k) porous SiCOH films have been prepared using 1,2-bis(triethoxysilyl)ethane, triethoxymethylsilane, and a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template by means of spin-coating. The resulting films were characterized by cross-section scanning electron microscopy, small-angle x-ray diffraction, atomic force microscopy, Fourier-transform infrared spectroscopy, nanomechanical testing, and electrical measurements. Thermal treatment at 350°C for 2 h resulted in the formation of ultralow-k films with k of $2.0, leakage current density of 3 9 10 À8 A/cm 2 at 1 MV/cm, reduced modulus (E r ) of $4.05 GPa, and hardness (H) of $0.32 GPa. After annealing between 400°C and 500°C for 30 min, the resulting films showed fluctuant k values of 1.85 to 2.22 and leakage current densities of 3.7 9 10 À7 A/cm 2 to 3 9 10 À8 A/cm 2 at 0.8 MV/cm, likely due to the change of the film microstructure. Compared with 350°C annealing, higher-temperature annealing can improve the mechanical strength of the ultralow-k film, i.e., E r % 5 GPa and H % 0.56 GPa after 500°C annealing.

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Investigation of deposition temperature effect on properties of PECVD SiOCH low-k films

Cited by 49 publications

References 19 publications

A Chemical Study of Plasma‐Deposited Organosilicon Thin Films as Low‐k Dielectrics

A Chemical Study of Plasma‐Deposited Organosilicon Thin Films as Low‐k Dielectrics

Organic and Inorganic Hybrid-Polymer Thin Films by PECVD Method and Characterization of Their Electrical and Optical Properties

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

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