Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

Kerr, Lei L.; Li, Sheng S.; Johnston, Steven W.; Anderson, Travis J.; Crisalle, O.D.; Kim, W.K.; AbuShama, J.; Noufi, R.

doi:10.1016/j.sse.2004.03.005

Cited by 96 publications

(65 citation statements)

References 10 publications

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“…The trap concentration ( N T ) can be obtained from the Eq. (4) 15, 39 :here N A is the net acceptor concentration in Sb 2 Se 3 film, which can be obtained from C-V profiling (Fig. 4i); Δ C max equals to the difference between C t 0+ and C 0 (Fig.…”

Section: Resultsmentioning

confidence: 99%

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

et al. 2018

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Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

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Section: Resultsmentioning

confidence: 99%

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

et al. 2018

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“…A more detailed description of the DLTS characterization of samples A and B has been reported elsewhere. 31,32 For sample A, an electron trap peak at T ' 100 K was observed, with an activation energy of E c -0Á07 eV, where E c is the conduction band edge energy. The trap density was estimated to be N T ¼ 4Á2 Â 10 13 cm À3 .…”

Section: Dlcpmentioning

confidence: 98%

Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells

Repins

Stanbery²,

Young

et al. 2005

Prog. Photovolt: Res. Appl.

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We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in multiple laboratories. This collection of samples exhibits a wide variation of morphologies, compositions, and solar power conversion efficiencies. An extensive characterization of transport properties is reported here -including those derived from capacitance-voltage, admittance spectroscopy, deep level transient spectroscopy, time-resolved photoluminescence, Auger emission profiling, Hall effect, and drive level capacitance profiling. Data from each technique were examined for correlation with device performance, and those providing indicators of related properties were compared to determine which techniques and interpretations provide credible values for transport properties. Although these transport properties are not sufficient to predict all aspects of current-voltage characteristics, we have identified specific physical and transport characterization methods that can be combined using a model-based analysis algorithm to provide a quantitative prediction of voltage loss within the absorber. The approach has potential as a tool to optimize and understand device performance irrespective of the specific

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“…Of particular interest are traps near mid-gap that might serve as efficient generationrecombination centers leading to open-circuit voltage reduction [4]. The E V + 0.47 eV trap is a common mid-gap state that has been potentially associated with In vacancies and Fe impurities [10], [14], [15], but where these defects are located and what role the microstructure plays have not been established. Here, using nano-DLTS, the spatial distribution and correlation with microstructure is determined and compared with traditional defect spectroscopy methods to demonstrate the correlation of macro-and nanometer-scales.…”

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confidence: 99%

Direct nm-Scale Spatial Mapping of Traps in CIGS

Paul

Cardwell

Jackson

et al. 2015

IEEE J. Photovoltaics

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Nanometer-scale deep-level transient spectroscopy (nano-DLTS) is used to simultaneously map the spatial distribution of the E V + 0.47 eV trap in p-type Cu(In,Ga)Se 2 with surface topography, providing a spatially resolved correlation between electrical traps with physical structure. It is demonstrated that the observed E V + 0.47 eV trap properties using nano-DLTS match those seen with conventional macroscopic device-scale DLTS measurements. Additionally, maps of the E V + 0.47 eV trap reveal that this trap is not uniformly distributed and is likely associated with specific grain boundary structures. The combined approach reveals overall trap impact from the local nanometer scale to the device (micrometer-centimeter) scale and correlation with physical structures on the nanometer-scale that can be broadly applied to any semiconductor material.Index Terms-Cu(In, Ga)Se 2 (CIGS), deep levels, nano-DLTS, thin-film solar cell.

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Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

Cited by 96 publications

References 10 publications

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells

Direct nm-Scale Spatial Mapping of Traps in CIGS

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