Investigation of defect-induced abnormal body current in fin field-effect-transistors

Abstract

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

“…145) ) As seen in the case of incident species with lighter masses, the number of generated defects increases considerably with an increase in the energy of incident species. The presence of defects in a finFET was discussed, 146) although the detailed mechanisms has not been clarified at this stage in terms of stochastic straggling. Recently, this predicted phenomenon was experimentally verified.…”

“…Then, the resultant density of defects in the distribution tail or in the 3D structure should be quantified. 146) Sato et al revealed 147) the PPD stochastic mechanisms using a specified device structure. 147) As shown in Fig.…”