Investigation of deep levels in GaInNAs

Abulfotuh, F.; Balcioglu, A.; Friedman, Daniel; Geisz, John F.; Kurtz, S. R.

doi:10.1063/1.57995

Cited by 12 publications

(8 citation statements)

References 2 publications

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“…11 The HT1 and HT4 traps have activation energies of 0.18 and 0.59 eV ͑Table I͒, respectively. Abulfotuh et al 12 reported a nitrogen-related shallow hole trap with an activation energy of 0.22 eV. The HT1 trap has an activation energy close to the reported value, thus similar nitrogen-related defects are postulated to be present in our study.…”

Section: B Majority-carrier "Hole… Dlts Measurementssupporting

confidence: 81%

Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

Xie¹,

Yoon²,

Wang³

2005

Journal of Applied Physics

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We report the effects of ex situ thermal annealing on the deep-level defects and the minority-carrier electron diffusion length in Be-doped, p-type In0.03Ga0.97As0.99N0.01 grown by solid source molecular-beam epitaxy. Deep-level transient spectroscopy measurements reveal two majority-carrier hole traps, HT1 (0.18 eV) and HT4 (0.59 eV), and two minority-carrier electron traps, ET1 (0.09 eV) and ET3 (0.41 eV), in the as-grown sample. For the sample with postgrowth thermal annealing, the overall deep-level defect-concentration is decreased. Two hole traps, HT2 (0.39 eV) and HT3 (0.41 eV), and one electron trap, ET2 (0.19 eV), are observed. We found that the minority-carrier electron diffusion length increases by ∼30% and the leakage current of the InGaAsN∕GaAsp-n junction decreases by 2–3 orders after thermal annealing. An increase of the net acceptor concentration after annealing is also observed and can be explained by a recently proposed three-center-complex model.

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Section: B Majority-carrier "Hole… Dlts Measurementssupporting

confidence: 81%

Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

Xie¹,

Yoon²,

Wang³

2005

Journal of Applied Physics

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“…H3an and H5ag deep traps have activation energies of 0.23eV and 0.25eV, respectively. These values are close to nitrogen-related hole trap with activation energy of 0.22eV that was reported by Abulfotuh et al [42]. Both samples exhibit shallow traps namely H1an(0.06eV), H2an(0.065eV) and H4ag(0.07eV).…”

Section: Deep Level Transient Spectroscopy Characteristics Of As-grown and Annealed Diodessupporting

confidence: 89%

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih¹,

Albalawi²,

Henini³

2019

Semicond. Sci. Technol.

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The effect of rapid thermal annealing on the electrical properties of p ++ GaP/p -GaAsPN/n + GaP diodes were investigated by using Current -Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) techniques in the temperature range from 100K to 440K. It was observed that rapid thermal annealing treatment improves the electrical characteristics of as-grown structures. The annealed samples showed an ideality factor lower than the as-grown samples for all temperatures. The ideality factor values from I-V characteristics has changed between 6.8 and 1.9 in the temperature range of 110-430K for as grown diode, and between 6.3 and 1.44 in the temperature range 100-400K for the annealed diode. On the other hand, the barrier height increases and the ideality factor decreases with increasing temperature for all samples. The barrier height values has changed between 0.29 eV and 0.71eV in the temperature range of 190-430K for as grown diode, and between 0.38 eV and 0.77eV in the temperature range 180-420K for the annealed diode. High values of barrier heights were observed in the annealed samples due to the barrier height in-homogeneities at the p-i-n junction.The net acceptor concentration was calculated to be 1.18 x10 18 cm -3 and 2.11x10 18 cm -3 for the as-grown and annealed GaAsPN layers, respectively. The net acceptor concentration increases by ~56% and the leakage current of the GaAsPN/GaP p-i-n junction decreases by1-2 orders after RTA. DLTS and Laplace-DLTS measurements reveal three hole traps, H1an(0.06eV), H2an(0.065eV) and H3(0.23eV) in the annealed samples as compared with two hole traps, H4ag(0.07eV) and H5(0.25eV) in the as-grown samples. After rapid thermal annealing an extra shallow trap is created.

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“…Various trap levels have been discovered in GaInNAs by the deep-level transient spectroscopy ͑DLTS͒ technique. 3,4,10,11 Although the variation in the trap activation energy is dependent on the growth condition, two types of trap levels were identified in GaInNAs; namely a trap located at the midgap level and some shallow traps related to nitrogen incorporation. However, despite the identification of the traps, understanding of the contribution of each defect type to the dark current is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate

Loke

Yoon

Wicaksono

et al. 2007

Journal of Applied Physics

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Articles you may be interested inDeep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector We present the reverse-bias current-voltage and deep-level transient spectroscopy ͑DLTS͒ characteristics of a Ga 0.90 In 0.10 N 0.033 As 0.967 / GaAs positive-intrinsic-negative photodiode ͑E g = 0.92 eV͒ and a trap-assisted tunneling model which considers generation-recombination and tunneling mechanisms. Using trap parameters obtained from the DLTS measurement, the model generates current-voltage characteristics of the photodiode, which were found to be in good agreement with experimental current-voltage curves at different temperature. The model also suggests that high dark current at low reverse-bias voltage is caused by the presence of traps which have low activation energy. Furthermore, it is predicted that approximately ten times reduction in the dark current can be achieved when the trap concentration of type H-1 ͑E a = 0.15 eV͒ is reduced by one order. On the other hand, a similar reduction in defect concentration of type H-2 ͑E a = 0.40 eV͒, which is nearer to midgap does not produce the same effect.

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Investigation of deep levels in GaInNAs

Cited by 12 publications

References 2 publications

Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate

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