Investigation of deep energy levels in heterostructures based on GaN by DLTS

Stuchlíková, Ł.; Sebok, J.; Rybar, J.; Petrus, M.; Nemec, Michal; Harmatha, L.; Benkovska, J.; Kováč, J.; Škriniarová, J.; Lalinský, T.; Paskiewicz, R.; Tłaczała, M.

doi:10.1109/asdam.2010.5666319

Cited by 20 publications

(13 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first effect is ascribed to the increase in SRH non-radiative recombination, which reduces the amount of photogenerated hole-electron pairs that can be extracted from the MQW structure. The second effect can be attributed to an increased emission of carriers from the deep levels responsible for yellow luminescence in GaN (EC-0.9 eV), typically carbon [21], VGa-O complexes [22] or VGa-H [23]. By increasing temperature, we also noticed a shift of the band-to-band absorption of the InGaN (edge around 465 nm), that is ascribed to bandgap narrowing.…”

Section: Resultsmentioning

confidence: 75%

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

et al. 2020

View full text Add to dashboard Cite

In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW) photodetectors under different excitation density (616 µW/cm2 to 7.02 W/cm2) and temperature conditions (from 25 °C to 65 °C), relating the experimental results to carrier recombination/escape dynamics. We analyzed the optical-to-electrical power conversion efficiency of the devices as a function of excitation intensity and temperature, demonstrating that: (a) at low excitation densities, there is a lowering in the optical-to-electrical conversion efficiency and in the short-circuit current with increasing temperature; (b) the same quantities increase with increasing temperature when using high excitation power. Moreover, (c) we observed an increase in the signal of photocurrent measurements at sub-bandgap excitation wavelengths with increasing temperature. The observed behavior is explained by considering the interplay between Shockley–Read–Hall (SRH) recombination and carrier escape. The first mechanism is relevant at low excitation densities and increases with temperature, thus lowering the efficiency; the latter is important at high excitation densities, when the effective barrier height is reduced. We developed a model for reproducing the variation of JSC with temperature; through this model, we calculated the effective barrier height for carrier escape, and demonstrated a lowering of this barrier with increasing temperature, that can explain the increase in short-circuit current at high excitation densities. In addition, we extracted the energy position of the defects responsible for SRH recombination, which are located 0.33 eV far from midgap.

show abstract

Section: Resultsmentioning

confidence: 75%

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In this device, both Tp1 and Tp2 have been found to be thermally activated with E a = 0.65eVand0.37eV, respectively. Traps with the similar levels have been reported and identified in the GaN buffer close to the interface (~0.6 eV) [29], in heterostructure's interface (0.642 eV) [30], in the GaN film (0.59-0.63 eV) attributed to the edge dislocations by DLTS [31], in AlGaN barrier layer (0.3 eV-0.54e V) detected from transconductance dispersion and admittance curves [26], and in the AlGaN layer (0.37 eV) based on dynamic on-resistance (NDR) [32], respectively. It was suggested that Tp1 in the GaN layer are close to the AlGaN/GaN interface [29][30][31].…”

Section: Detrapping Processesmentioning

confidence: 80%

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Zheng

Zhang

Yang

2016

Microelectronics Reliability

View full text Add to dashboard Cite

“…Two time constants representing peaks on the current transient (DP1 and DP2) at 0.45 eV (12 s to 975 s) and 0.65 eV (2 ms to 48 ms) and a valley (TP1) at 0.86 eV (150 ms to 3 s) were measured. These activation energies are associated to C/O/H impurities for DP1 [14], VGa oxygen complex for DP2 [19] and gallium vacancies for TP1 [20] in the literature. The time and thermal windows for DP1 is notably in good concordance with the literature [14].…”

Section: Measurement Results and Discussionmentioning

confidence: 98%

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Divay

Masmoudi

Latry

et al. 2015

Microelectronics Reliability

View full text Add to dashboard Cite

International audienceGaN High Electron Mobility Transistors (HEMTs) are very promising for high power switching and radiofrequency operation. However, the lack of reliability feedback is one of its major drawbacks. Trapping effect especially is one of the main performance limitations of such components. Many measurement techniques exist for trapping effects characterization, especially for short time constant traps (s to several ms). However for longer time constants, self-heating may distort the measurements. This paper presents an electrical and athermal transient measurement method which has been developed to study the trapping and detrapping time constants of such components. It allows the extraction of slow transients without self-heating problems and is usable in long term electrical stress experiments. A simulation of this method with a simplified component’s model and the measurements results are presented. With this technique, we investigated especially the long time constants (τ>20 ms) over a range of temperature from 10°C to 105°C. We observed three thermally activated trap signatures on GaN devices with our method

show abstract

Investigation of deep energy levels in heterostructures based on GaN by DLTS

Cited by 20 publications

References 3 publications

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Contact Info

Product

Resources

About