An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Divay, Alexis; Masmoudi, Mohamed; Latry, Olivier; Duperrier, Cédric; Temçamani, Farid

doi:10.1016/j.microrel.2015.06.074

Cited by 6 publications

(5 citation statements)

References 22 publications

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“…This high parasitic effect is then to be followed during ageing. Measurements with A-DCTS (Athermal DC Transient Spectroscopy [10]) were performed before and after ageing in order to characterize the trapping effect evolution. These pulsed current transient measurements are conducted at different temperatures in order to extract the activation energies of defects in the device.…”

Section: Methodsmentioning

confidence: 99%

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Divay

Duperrier

Temçamani

et al. 2016

Microelectronics Reliability

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The reliability of RF AlGaN/GaN HEMT devices on SiC substrate is investigated here in pulsed RF condition at nominal and maximum rating drain quiescent bias. During these 3500 hours tests, high voltage especially during the RF pulse leads to a progressive decrease in g m and I DS S while trap concentration increases. These evolutions may be attributed to trap generation by hot carrier injection and highlight the importance of drain quiescent voltage as an important acceleration factor for this technology's reliability in pulsed RF conditions.

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Section: Methodsmentioning

confidence: 99%

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Divay

Duperrier

Temçamani

et al. 2016

Microelectronics Reliability

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“…A number of trapping effects characterizations techniques rely on I(t,T) measurements like DLTS, DLOS and A-DCTS (Athermal DC Transient Spectroscopy) [9]. From this data, it is common to fit the transient using a multi-exponential model (eq.…”

Section: I Methodologymentioning

confidence: 99%

“…FinaUy, in the case of a current transient in the saturation region (for athermal current transients like A-DCTS for example [9]), the model may be expressed as:…”

Section: B a Physical Model For Trap Extractionmentioning

confidence: 99%

Study of different algorithms and models for trapping effect extraction

Divay¹,

Masmoudi²,

Latry³

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects Iike traps are a common issue on this type oftechnology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting in a measurement of a current transient at different junction temperatures. This paper presents a comparison between different extraction algorithms for trapping signatures and the possible impact of their imprecision when extracting the activation energy on measurement data. Furthermore, a more physical model for trap extraction will be presented with its limitations.

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“…7), but in total agreement with the intended goal of defect evidence and characterization. For instance photo Emission Microscopy (EMMI), Optical Beam Induced Resistance Change (OBIRCH) technique [14], electroluminescence, or other athermal A-DCTS techniques [15] and C-V measurements are providing the users with key complementary clues.…”

Section: A Non-destructive Techniques Before/during/after Stressmentioning

confidence: 99%

Methodology for accurate diagnostic of defects in III-N HEMT technologies: Non-destructive and destructive experimental tools — Electrical and T-CAD models

Tartarin

Saugnon

Graffeuil

et al. 2018

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON)

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III-V wide bandgap disruptive technology is firmly positioned as a leader for high power segments operating at high frequency or under switching mode. Still, it is needed to investigate these transistors to push the maturity towards higher levels and to address elevated junction temperatures. Concerning analog RF applications, more than two decades of studies lay the main technological process basis for both obtaining improved RF performances and reliability. However, if failure signatures and their associated defects are now issues likely to be understood as individual problems, the global failure behavior still poses challenges to overcome. This paper is a contribution to the failure analysis studies on GaN technologies by providing a methodology for ensuring the validity of the stress analysis, to the accurate identification of the involved defects; this procedure is suitable even for a single stress test campaign, when usually several accelerated life tests are needed to separate concurrently proceeding effects. This methodology is based on the use of destructive and non-destructive characterization techniques, as well as electrical modelling. Key degradation processes are highlighted from different feedback studies, still considering the need of a secure procedure to avoid any misunderstanding about the origin of the tracked DC or RF variation of the devices under test.

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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Cited by 6 publications

References 22 publications

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Study of different algorithms and models for trapping effect extraction

Methodology for accurate diagnostic of defects in III-N HEMT technologies: Non-destructive and destructive experimental tools — Electrical and T-CAD models

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