Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

Sanayeh, Marwan Bou; Jaeger, A.; Schmid, W.; Tautz, Soenke; Brick, P.; Streubel, K.; Bacher, G.

doi:10.1063/1.2345225

Cited by 50 publications

(19 citation statements)

References 16 publications

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“…either as panchromatic maps or at the QW emission wavelength. COD generates areas of substantially reduced QW emission in such maps, the so-called dark bands [85,[87][88][89][90][91][92][93][94][95][96][97]. The barriers, into which the QW is physically embedded, are typically less or even not affected by this type of damage.…”

Section: Failure Analysis Of Devices Affected By Codmentioning

confidence: 99%

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Failure Analysis Of Devices Affected By Codmentioning

confidence: 99%

“…The crystallographic structure of the dark bands is described as polycrystalline [90,93]. This suggests that they originate from a re-crystallization process.…”

Section: Failure Analysis Of Devices Affected By Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…Catastrophic optical mirror damage has been extensively investigated, but very limited reports on bulk damage in broad-area lasers have been presented. Several groups investigated failure modes in broad-area lasers in recent years [13][14][15] and our group recently reported a reliability and failure mode investigation of broad-area lasers using electron beam induced current (EBIC) and high-resolution transmission electron microscope (HR-TEM) techniques [16,17]. In the present study, we report on our investigation of catastrophic facet and bulk degraded broad-area InGaAs strained QW single emitters using various analytical techniques including EBIC, focused ion beam (FIB), and HR-TEM.…”

Section: Introductionmentioning

confidence: 99%

Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters

et al. 2009

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Extensive investigations by a number of groups have identified catastrophic sudden degradation as the main failure mode in both single-mode and multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers. Significant progress made in performance characteristics of broad-area InGaAs strained QW single emitters in recent years has led to an optical output power of over 20W and a power conversion efficiency of over 70% under CW operation. However, unlike 980nm single-mode lasers that have shown high reliability operation under a high optical power density of ~50MW/cm 2 , broad-area lasers have not achieved the same level of reliability even under a much lower optical power density of ~5MW/cm 2 . This paper investigates possible mechanisms that prevent broad-area lasers from achieving high reliability operation by performing accelerated lifetests of these devices and in-depth failure mode analyses of degraded devices with various destructive and non-destructive techniques including EBIC, FIB, and HR-TEM techniques. The diode lasers that we have investigated are commercial MOCVD-grown broad-area strained InGaAs single QW lasers at ~975nm. Both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. To investigate the role that generation and propagation of defects plays in degradation processes via recombination enhanced defect reaction (REDR), EBIC was employed to study dark line defects in degraded lasers, failed under different stress conditions, and the correlation between DLDs and stress levels is reported. FIB was then employed to prepare TEM samples from the DLD areas for cross-sectional HR-TEM analysis.

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“…It was confirmed by electron beam induced current, real-time electroluminescence, and transmission electron microscopy analysis that the active region of the COD failed lasers reveals an extensive layer intermixing and a highly defective core of molten and resolidified material [5,6]. Therefore, investigating the defects in GaAs crystal and LDs is important to improve the performance of the LDs [7,8]. Another mechanism leading to COD is identified that the spatial hole burning effect causes the near-field intensity distributing periodically, such distribution results in an extra enhancement of the facet heating, and the COD occurring finally [9].…”

mentioning

confidence: 92%

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Qiao

Feng

Cong

et al. 2013

Phys. Status Solidi A

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The transient thermal characteristics related to catastrophic optical damage (COD) in high power AlGaAs/GaAs laser diodes (LDs) are studied experimentally by means of thermal infrared imaging, laser scanning confocal microscopy, and transient thermal technique. The transient thermal technique is based on the diode forward voltage method in which the structure function theory is applied to determine the component thermal resistance and temperature rise of the LDs. We have recorded the dynamics of COD process using thermal infrared camera. Two melting spots are observed in the output facet after COD which location exactly matches the position of the thermal flash from the thermal imaging and even the temperature of COD seed has a sudden increase of 32 K when the COD event occurs. Furthermore, we find that the thermal resistance from chip to In solder increases remarkably after COD, meanwhile the thermal resistance of solder and package does not change apparently. The results are attributed to the heat power dissipation increase originating from the enhancement of nonradiative recombination after COD under constant input electrical power.

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Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

Cited by 50 publications

References 16 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

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