Investigation of Current Spike Phenomena during Heavy Ion Irradiation of NAND Flash Memories

Oldham, T.R.; Berg, Melanie D.; Friendlich, M.; Wilcox, Ted; Seidleck, C.M.; LaBel, Kenneth A.; Irom, F.; Buchner, S.; McMorrow, D.; Mavis, D.G.; Eaton, P.H.; Castillo, J. Plaza

doi:10.1109/redw.2010.6062522

Cited by 14 publications

(19 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In [1], the broad beam tests resulted in 52 high current events, defined as 80 mA or more, which we concluded could most likely be explained using the analysis of Shindou, et al [5]. These events occurred in a total of 38 beam runs.…”

Section: Introductionmentioning

confidence: 73%

“…Whereas the broad beam irradiations produced many high current events, the Milli-Beam™ produced none. On the other hand, as a localized source, the laser results of [1] did not exhibit the expected agreement with the Milli-Beam™ , generating high current events. In this paper, we present the results of two additional laser experiments, plus some additional analysis, that explain the results, and apparent inconsistencies, in [1].…”

Section: Introductionmentioning

confidence: 80%

“…Of more than 125 SEFIs in the Milli-Beam™ test, none produced current levels above 20 mA. The purpose of the two new laser tests reported here was to explain the apparent differences between the laser and the Milli-Beam™ reported in [1].…”

Section: Introductionmentioning

confidence: 85%

“…W E have reported [1] on tests performed on NAND flash memories with the NRL pulsed laser [2] and the Micro-RDC Milli-Beam™ [3], comparing them with broad beam heavy ion results. These tests were part of an effort to investigate the underlying mechanisms for high current events that had been reported previously [4].…”

Section: Introductionmentioning

confidence: 99%

“…For this reason, we focused on the peripheral control circuits in both the laser and the MilliBeam™ tests. In [1], the results were that both the laser and the Milli-Beam heavy ion test produced numerous SEFIs (Single Event Functional Interrupts), scattered throughout the peripheral control logic, and that the locations of the SEFIs correlated fairly well. On the other hand, the nature of the SEFIs was quite different.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Oldham¹,

Friendlich

Wilcox

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Pulsed laser test results for NAND flash memories are compared with broad beam heavy ion results and also with heavy ion results obtained with the collimated Milli-Beam™ source. The pulsed laser measurements reported here, with smaller focused spot sizes and as a function of the incident pulse energy, serve to reconcile the previously reported inconsistencies. The Milli-Beam™ and pulsed laser results appear to be consistent, and differences from the broad beam heavy ion results can be explained. The results suggest that the high current SEFIs reported by us and others arise from multiple ion (or multiple photon) interactions, and are not associated with single ion strikes.

show abstract

Section: Introductionmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Oldham¹,

Friendlich

Wilcox

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

Barella

Sanca

Gomez-Marlasca

et al. 2019

Radiation Physics and Chemistry

View full text Add to dashboard Cite

Space and terrestrial radiation effects in flash memories

Bagatin

Gerardin

Paccagnella

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms underlying the observed phenomena are thoroughly discussed on both floating gate cells and the complex control circuitry. The covered effects are relevant for all floating-gate based flash memories that require very high levels of reliability, from critical applications at the terrestrial level to radiation-harsh environments, such as space, nuclear power plants, and high-energy physics experiments.

show abstract

Investigation of Current Spike Phenomena during Heavy Ion Irradiation of NAND Flash Memories

Abstract: Abstract-A series of heavy ion and laser irradiations were performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed.

Cited by 14 publications

References 9 publications

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

Space and terrestrial radiation effects in flash memories

Contact Info

Product

Resources

About