Investigation of CSAR 62, a new resist for electron beam lithography

Abstract

Articles you may be interested inPolymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires Electron beam lithography on vertical side faces of micrometer-order Si block CSAR 62 is a new positive tone electron beam resist designed to have similar performance to ZEP520A in resolution, speed, and etch resistance. In this paper, the authors have used the resist to carry out high resolution electron beam lithography and as a mask for reactive ion etching on dielectrics, gallium arsenide, and silicon substrates coated with a 160 nm film of aluminum. Comparisons have been made between the results obtained using CSAR 62, ZEP520A, and polymethylmethacrylate. The authors conclude that CSAR 62 does demonstrate similar resolution, sensitivity, and etch resistance as ZEP520A but also gives rise to substantial resist residuals after development. These are almost entirely eliminated by using an alternative developer.

Optimized graphene electrodes for contacting graphene nanoribbons

“…The smallest graphene electrode separation (<15 nm) is achieved using CSAR resist, due to its excellent performance in terms of resolution, sensitivity, and etch resistance. [47] Third, we emphasize that the duration of the second RIE step has to be short enough to avoid a sideways etching of the resist mask but long enough that the monolayer graphene is fully etched. This trade-off leads to a delicate balance between device yield and electrode separation.…”

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

“…It was shown to provide similar resolution, sensitivity, and etch resistance as ZEP520A but leads to undesired resist residuals after development. [17] Finally, the resist A C C E P T E D M A N U S C R I P T…”

High-Q Silicon Nitride Drum Resonators Strongly Coupled to Gates

“…The device fabrication process starts with a silicon substrate (∼10k Ω-cm) covered with ∼100 nm stoichiometric SiN thin film. Inspired by previous work on the SiN drum, we define the diameter of the drum by using electron beam (EB) lithography to pattern circularly symmetric holes with 200 nm in diameter and 1.5 μm in spacing distance on the CSAR 62 resist coated on a SiN/silicon wafer . We take this resist as an etching mask and the drum is released from the Si substrate by reactive ion etching of the SiN layer followed by a selective XeF 2 silicon etching through these holes.…”