High-Q Silicon Nitride Drum Resonators Strongly Coupled to Gates

Abstract

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ∼104 (comparable to that of bare drums at room temperature) and present our ability to detect ∼10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, so that we can perform optomechanical sideband pumping with a fairly good coupling strength G and demonstrate mechanical parametric amplification. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.

A Semi-Linear Elliptic Model for a Circular Membrane MEMS Device Considering the Effect of the Fringing Field

“…MEMS is a rampant technology employed for realizing thermo-elastic systems [ 1 , 33 , 34 , 35 , 36 , 37 ], and it has a wide variety of applications ranging from biomedical engineering to microfluidics [ 38 , 39 , 40 , 41 , 42 ]. Moreover, many researchers are actively engaged in the development of important experimental research works for the development and prototyping of special MEMS such as, for example, circular graphene membrane MEMS devices [ 43 , 44 ], SiN circular membrane MEMS devices [ 45 , 46 ], and CMOS MEMS-based membrane-bridge devices [ 47 ] particularly useful for industrial applications. Moreover, the scientific community is intensively working on the analysis/synthesis of multi-physical models characterized by a high degree of symmetry, because these are more easily achievable from a technological point of view [ 24 , 30 , 48 , 49 , 50 , 51 ].…”

Capacitively coupled distinct mechanical resonators for room temperature phonon-cavity electromechanics

“…V µw /(2d). 23 Here, ω and V µw are the frequency and the amplitude of the microwave signal for detection, respectively. The parameter Z 0 is the impedance of the measurement chain (here, 50 Ohm).…”

“…Details of device fabrication have been reported in our previous work. 23 The measurement setup is schematically depicted in Figure 1…”

“…Both electromechanical resonators are driven by low frequency signals combined with RF and dc signals. The mechanical displacement is imprinted in the reflected microwave signals and read out by a lockin amplifier through frequency down-conversion 23. The inset shows a scanning electron microscope (SEM) image of an Al drum resonator, which is suspended on top of a SiN drum covered with an Al thin film.…”

“…1. The calculated mechanical displacements are converted into electrical signal amplitude in a microwave measurement scheme and are shown in Figure4(e)-(h), by using the relation V out = ωZ 0 C g0 X 1(2) V µw /(2d) 23. Here, ω and V µw are…”