Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs

Chen, W.P.-N.; Su, Pin; Goto, Ken

doi:10.1109/tnano.2008.2004771

Cited by 9 publications

(1 citation statement)

References 17 publications

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“…5 that µ eff increases with V g in the low |V gst | regime. This is because in the low |V gst | regime, the mobility is mainly determined by Coulombic scattering [20]. The mobile carrier screening makes µ eff increases with V g .…”

Section: Devices and Measurementmentioning

confidence: 99%

Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs

Kuo

Chen

2010

IEEE Trans. Nanotechnology

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This paper investigates and analyzes the matching properties of nanoscale strained MOSFETs under various bias conditions. Through a comprehensive comparison between coprocessed strained and unstrained PMOSFETs, the impact of processinduced uniaxial strain on the matching performance of MOS devices has been assessed and analyzed. Our examination indicates that, in the low-gate-voltage-overdrive (|V gst |) regime, the normalized drain current mismatch (σ(∆I d )/I d ) of the strained device is almost the same as that of the unstrained one at a given transconductance to drain current ratio (g m /I d ). In the high |V gst | linear regime, the σ(∆I d )/I d for the strained device is smaller than that of the unstrained one because of its smaller normalized current factor mismatch. In the high |V gst | saturation regime, the improvement in the σ(∆I d )/I d for the strained device is further enhanced because of the reduced critical electric field at which the carrier velocity becomes saturated.

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Section: Devices and Measurementmentioning

confidence: 99%

Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs

Kuo

Chen

2010

IEEE Trans. Nanotechnology

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Towards one key to one lock: catalyst modified indium oxide nanoparticle thin film sensor array for selective gas detection

et al. 2012

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"Towards one key to one lock: catalyst modified indium oxide nanoparticle thin film sensor array for selective gas detection," J. Mater. Chem., 2012: 22, 7308 Homogeneous In 2 O 3 nanoparticles (NPs) were self-assembled into thin film sensor arrays on a single chip, with further surface modification by noble metal catalysts. The NP film sensor arrays show clear current responses when exposed to different target gases, and both sensitivity and selectivity were greatly improved. Particularly, the sensors modified with Au, Pd, and Pt nanocatalysts demonstrated higher sensitivity to H 2 S, H 2 and CO, respectively, making the gas discrimination direct and simple, like ''one key to one lock''. The particle size dependence of the noble metal modifiers to the sensitivity was further investigated by tuning the sputtering parameters. Three different trends of sensitivities were observed, each attributed to different mechanisms. The modified nanoparticle film sensor was also fabricated on flexible substrates and the sensing performance was investigated at different bending angles.

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Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

Baykan

Thompson

Nishida

2010

Journal of Applied Physics

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Using a classification scheme based on carrier confinement type (electrostatic and spatial) and the degrees of freedom of the mobile carriers (3DOF, 2DOF, and 1DOF), strain effects on 3DOF to 1DOF silicon logic devices are compared from quantum confinement and device geometry perspectives. For these varied device geometries and types, the effects of strain-induced band splitting and band warping on the modification of the average conductivity effective mass and carrier scattering rates are evaluated. It is shown that the beneficial effects of strain-induced band splitting are the most effective for devices with little or no initial band splitting and become less so for devices with already large built-in band splitting. For these devices with large splitting energy, the potential for strain-induced carrier conductivity mass reduction through repopulation of lower energy bands and the suppression of optical intervalley phonon scattering are limited. On the other hand, for all devices without spatial confinement, a comparable amount of effective mass reduction occurs through favorable strain-induced band warping. Under spatial carrier confinement, much higher strain levels with respect to unconfined or electrically confined devices are required to observe strain-induced band warping in the band structure, with larger strain requirements as the confinement dimension decreases. In electrically confined volume-inversion devices, the favorable strain type required for carrier mass reduction results in increased surface scattering by bringing the carrier centroid closer to gate surfaces. However, for spatially confined volume-inversion devices, the favorable mechanical strain does not alter the carrier distribution in the device cross section. Consequently, strain is expected to be more effective in modification of low field carrier transport in electrically confined volume-inversion devices and less for spatially confined devices, with respect to conventional 2DOF planar metal-oxide-semiconductor field-effect transistors. On the other hand, for high-field quasiballistic transport, spatially confined devices, have the highest potential for strain-induced modification of device ballisticity, since the carrier backscattering ratio strongly depends on the surface roughness scattering rate at the source-end of the channel.

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Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs

Cited by 9 publications

References 17 publications

Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs

Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs

Towards one key to one lock: catalyst modified indium oxide nanoparticle thin film sensor array for selective gas detection

Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

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