“…It has been recognized, therefore, that not only structural defects but also lattice elastic stress/strain near to epilayer/substrate interfaces (for instance, originated by different thermal expansion coefficients) are factors that crucially influence device performance and reliability. In this context, it is of fundamental technological importance to detect and to quantify, with high resolution, in-plane and out-of-plane lattice strain distributions in low-dimensional structures, since an anisotropic strain may, for example, limit or enhance the injection or mobility of charge carriers in one of the x, y or z directions (Baykan et al, 2010). The term 'in-plane' refers to the xy plane, while 'out-ofplane' refers to the direction along the z axis.…”