Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

Boussouar, L.; Ouennoughi, Z.; Rouag, N.; Sellai, A.; Weiß, Roland; Ryssel, H.

doi:10.1016/j.mee.2010.12.070

Cited by 40 publications

(26 citation statements)

References 42 publications

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“…Romanov et al [13] have obtained metal/n-6H-SiC diode structures with ideality factors of 1.28-2.14 and potential barriers from 0.58 to 0.62 eV on the semiconductor side by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, and Zr metal films on n-6H-SiC substrates. Barrier height value of Mo/4H-SiC MS structure were reported as 1.39 eV by Boussouar et al [14].…”

Section: Resultsmentioning

confidence: 95%

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

Asubay

Genişel

Ocak

2014

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 95%

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

Asubay

Genişel

Ocak

2014

Materials Science in Semiconductor Processing

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“…However, the current transport properties of SiC remain still as a topic which is interested. In the literature, it is seen frequently that the researches connected with SiC Schottky rectifiers have majored on 4H-SiC [11][12][13][14][15][16][17][18][19][20][21][22][23][24] and 6H-SiC [15,[25][26][27][28]. However, 4H-SiC is preferred due to the isotropic nature of its electrical properties, and the fact that, the electron mobility of 4H-SiC is twice that of 6H-SiC [4,29].…”

Section: Introductionmentioning

confidence: 99%

“…In the literature, different metals such as the aluminum [11,12], tungsten (W) [13], titanium (Ti) [14][15][16][17][18][19], nickel (Ni) [14,16,20,21], molybdenum (Mo) [22,23] have been used by the various authors to fabricate Schottky contacts on 4H-SiC. However, Au as a refractory metal on 4H-SiC was used in limited number [24] as we know.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

Gülnahar

2014

Superlattices and Microstructures

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“…Current-voltage measurements After fabrication of Schottky diodes, first step is to measure their current-voltage (I-V) characteristics that provide immediate information about quality and suitability of diodes. I-V curves may be described by thermionic emission model, with a series resistance R s [25], according to equation (1).…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Among its properties, there are its high electric field strength, high electron drift velocity, high thermal conductivity, radiation and harsh ambient endurance, high melting point that lead to significant advantages for power switching devices. It grows in many different polytypes, but the most studied are the 3C, 4H, and 6H SiC [1,2]. On the other hand, ZnO has a direct wide band gap (3.37 eV), large exciton binding energy and piezoelectric properties.…”

Section: Introductionmentioning

confidence: 99%

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

Rebaoui

Bouiajra

Abid

et al. 2017

Microelectronic Engineering

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SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes, (2017), doi:10.1016/j.mee.2017 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractElectrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I-V and C-V-f measurements. Schottky barrier height (Φ b ), ideality factor (n), and series resistance (R s ) were extracted from forward I-V characteristics.(Φ b ), carrier's concentrations (N d -N a ) and (R s ) frequency dependence were extracted from C-V-f characteristics. The extracted n values suggest that current transport is dominated by interface generationrecombination and/or barrier tunneling mechanisms. When changing SiC polytypes, the rectifying ratio of ZnO/n-4HSiC is found to be twice that of ZnO/n-6HSiC. A change in doping nature gave a leakage current ratio of 40 between ZnO/p-4HSiC and ZnO/n-4HSiC. These results indicate that ZnO/p-4HSiC diodes have a complex current transport compared to diodes on n-type SiC. From I-V measurements, barrier height values are 0.63eV, 0.65eV and 0.71 eV for heterojunction grown on n-6HSiC, n-4HSiC and p-4HSiC, respectively. C-V measurements gave higher values indicating the importance of interface density of states. N ss values at 1MHz frequency are 4.54×10 11 eV -1 cm -2 , 3×10 12 eV -1 cm -2 and 8.13×1010 eV -1 cm -2 for ZnO/n-6HSiC, ZnO/n-4HSiC and ZnO/p-4HSiC, respectively. Results indicate the importance of SiC polytypes and its doping nature.

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Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

Cited by 40 publications

References 42 publications

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

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