Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Chen, Chia Yuan; Lai, Yun-Kai; Lee, Kung‐Yen; Huang, Chih-Fang; Huang, Shih-Wei

doi:10.3390/mi12070756

Cited by 4 publications

(4 citation statements)

References 23 publications

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“…A class of 1.2 kV SiC SJ MOSFETs, with an extremely low value of R on, sp xA, a higher value of withstanding the short-circuit capability, and a significantly lower value of reverse recovery loss, was demonstrated in [73,[175][176][177]. A DC-FSJ MOSFET (different concentration floating super junction MOSFET) was proposed [178], and the device was able to achieve a breakdown voltage of more than 3.3 kV, along with reduced R on, sp. The R on, sp of the proposed structure was 25% less than conventional vertical MOSFET under the same conditions.…”

Section: Superjunction Mosfetsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Superjunction Mosfetsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…Although elevated V BD enhances PFOM, higher R ON-SP can offset them. Illustrated in Figure 12 is Baliga's figure of merit benchmark plot, which assesses various vertical GaN and SiC devices designed for V BD of approximately 900 V and above [36,41,59,66,67,69,[71][72][73][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129][130][131][132]. The plot suggests that, at present, GaN vertical devices lie mainly near the SiC limit, indicating the potential for further enhancements in GaN vertical technology to yield more efficient power devices.…”

Section: Gan Vertical Transistor Summary and Benchmarkingmentioning

confidence: 99%

“…Benchmarking vertical GaN devices against lateral GaN MOSFET devices and vertical SiC devices. Reprinted/adapted with permission from Ref [36,41,59,66,67,69,[71][72][73][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129][130][131][132]…”

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confidence: 99%

Vertical GaN MOSFET Power Devices

Langpoklakpam,

Liu,

Hsiao

et al. 2023

Micromachines

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Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.

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“…Power MOSFETs made from the third-generation semiconductors, such as the SiC MOSEFT and GaN HEMT, have demonstrated their superior performance over their silicon-based counterparts [2,3]. On the other hand, the super-junction (SJ) MOSFET breaks the silicon limit by using alternative highly doped n-pillars and p-pillars in its drift region [1,[4][5][6]. The most attractive advantage is that its specific on-resistance is less than one fifth of that of the conventional power MOSFET with the same rated voltage.…”

Section: Introductionmentioning

confidence: 99%

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer

et al. 2022

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In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation. The device introduces an n+-buffer layer between the n−-buffer layer and the n+-substrate to improve the reverse recovery behaviour of its body diode. The n+-buffer layer provides residual carriers during the reverse recovery process, reduces the overshoot voltage, and suppresses oscillation. Simulated results demonstrate that the increment of the on-resistance and the drain-to-source overshoot voltage can be respectively kept below 5% and 20 V, if a 10 μm n+-buffer layer whose impurity concentration ranges from 4 × 1015 cm−3 to 6 × 1016 cm−3 is used. In addition, the fabrication process is the same as that of the conventional SJ-MOSFET. These features make the proposed SJ-MOSFET suitable for inverter applications.

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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Cited by 4 publications

References 23 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

Vertical GaN MOSFET Power Devices

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer

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