Abstract:In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation. The device introduces an n+-buffer layer between the n−-buffer layer and the n+-substrate to improve the reverse recovery behaviour of its body diode. The n+-buffer layer provides residual carriers during the reverse recovery process, reduces the overshoot voltage, and suppresses oscillation. Simulated results demonstrate that the increment of the on-resist… Show more
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