Investigating and modeling high frequency C-V characteristics of zinc oxide-based heterostructures

Семенов, А. Л.; Litvinov, V. G.; Kholomina, T. A.; Ermachikhin, A. V.; Rybina, N. V.; Громов, Д. Г.; Oleinik, S.P.

doi:10.1109/meco.2018.8405999

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…The next stage of the analysis was to determine the density of surface states at the ZnO-Si interface. The calculation of the density of surface states was carried out by the high-frequency capacitive method based on the concepts described by Terman (Semenov et al 2018). It was assumed that the change in the charge on the structure in the state of flat bands is the same for small changes in the voltage on the structure and the surface potential (Sze 1981).…”

Section: Resultsmentioning

confidence: 99%

Investigation of the properties of zinc oxide based heterostructures

Семенов

Kholomina

Litvinov

et al. 2021

Physics of Complex Systems

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The paper presents the results of an experimental study of the electric properties of ZnO-based polycrystalline heterosructures. C-V-characteristics of In/ZnO/n-Si/Al and Au/ZnO/n-Si/Al heterostructures were modeled. Influence of upper contacts material and annealing technology on structure characteristics was investigated. Surface states influence according to applied theoretical model was analyzed. Empirical dependence of the surface potential in silicon on the voltage applied on the structure was derived.

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Section: Resultsmentioning

confidence: 99%

Investigation of the properties of zinc oxide based heterostructures

Семенов

Kholomina

Litvinov

et al. 2021

Physics of Complex Systems

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Investigation of Morphology and Electrical Properties of Structures Based on the Heterojunction Monocrystalline Si/Microcrystalline ZnO

Semenov,

Litvinov,

Kholomina

et al. 2023

Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledov

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The results of an experimental study of the surface morphology of zinc oxide films and the electrical properties of structures based on the monocrystalline Si/microcrystalline ZnO heterojunction are presented. The structure of zinc oxide films grown in an atmosphere of argon and oxygen is analyzed, and the size distribution of nanoscale fibers grown on its surface is obtained. The capacitance-voltage characteristics of the In/ZnO/n-Si/Al and Au/ ZnO/n-Si/Al heterostructures have been simulated. Based on the calculations and comparison of experimental and model dependences, the concentration of free charge carriers in the sample and the position of the Fermi level were determined, the presence of a fixed charge in the structure was revealed, the density of surface states was found based on the ratio of the voltage applied to the structure and the surface potential at the interface of the materials of the layers of structures. The value of the built-in surface charge is calculated. The interrelation of the upper contact material with the volt-farad and volt-ampere characteristics of the structure is investigated. The resistance of the formed zinc oxide films is calculated. The prevailing charge transfer mechanisms are discussed. The influence of technological modes of obtaining zinc oxide films obtained by spray pyrolysis on the structure of the surface, the effective capacity of the structure, the density of electronic states, the processes of charge carrier transfer in samples under the action of an electric field is analyzed.

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Investigating and modeling high frequency C-V characteristics of zinc oxide-based heterostructures

Cited by 2 publications

References 6 publications

Investigation of the properties of zinc oxide based heterostructures

Investigation of the properties of zinc oxide based heterostructures

Investigation of Morphology and Electrical Properties of Structures Based on the Heterojunction Monocrystalline Si/Microcrystalline ZnO

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