Abstract:The paper presents the results of an experimental study of the electric properties of ZnO-based polycrystalline heterosructures. C-V-characteristics of In/ZnO/n-Si/Al and Au/ZnO/n-Si/Al heterostructures were modeled. Influence of upper contacts material and annealing technology on structure characteristics was investigated. Surface states influence according to applied theoretical model was analyzed. Empirical dependence of the surface potential in silicon on the voltage applied on the structure was derived.
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