Inversion of magnetoresistance in La1−x Sr x MnO3/Nb-doped SrTiO3/CoFe junctions

Ueda, Ken–ichi; Tozawa, K.; Asano, Hidefumi

doi:10.3938/jkps.63.706

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2016

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“…Only few studies on such junctions in thin film configuration are known, despite their importance for applications in micro-and nanoelectronics. However, in these works relatively thick films were used [12], or the junction structure differs noticeably from the one that we investigated [13,14].…”

Section: Introductionmentioning

confidence: 99%

Ultrathin junctions based on the LaSrMnO3/Nb:SrTiO3 functional oxide interface

et al. 2016

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High-quality all-oxide thin film metal-semiconductor junctions, fabricated of a half-metallic ferromagnet La 0.7 Sr 0.3 MnO 3 and of a niobium doped n-type semiconductor SrTiO 3 (SrTi 0.8 Nb 0.2 O 3) by pulsed laser deposition, were studied in terms of their electronic transport properties in a wide temperature range. A fabrication process for ultrathin film metal-semiconductor junctions with micrometre-sized mesas has been established. The current-voltage characteristics of the junctions were found at variance with the conventional thermionic emission theory often applied to explain the transport properties of Schottky contacts. This discrepancy is tentatively ascribed to the very high electric field in the ultrathin SrTi 0.8 Nb 0.2 O 3 layer and its effect on carrier depletion and dielectric constant.

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Section: Introductionmentioning

confidence: 99%