Inversion-layer induced body current in SOI MOSFETs with body contacts

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

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Anomalous substrate current in polycrystalline silicon thin-film transistors

Zan

Chen

Wang³

et al.

Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710)

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In this paper, the substrate current of polycrystalline silicon thin-film transistors was measured and investigated the first time. With typical T-gate pattered sttucture, an abnormal high substrate current was found while devices were operated under high gate voltage. This is generated from the parasitic tunnelling current between the n+ inversion region and the pf body region. Under lower gate voltage, substrate current generated from impact ionization effect is also observed and characterized. After extracting fitting parameters from the device characteristics, a simple physically-based model was established and compared with the measured results. A plausible grain boundary scattering effect was included in the proposed model. Good agreements were found through a wide range of gate bias and various drain bias, verifying the validity of this unifiedmodel.

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Inversion-layer induced body current in SOI MOSFETs with body contacts

Cited by 4 publications

References 10 publications

Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs

Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs

Investigation of defect-induced abnormal body current in fin field-effect-transistors

Anomalous substrate current in polycrystalline silicon thin-film transistors

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