Intrinsic Point Defects in Semiconductors 1999

Watkins, G. D.

doi:10.1002/9783527619290.ch3

Cited by 5 publications

(11 citation statements)

References 176 publications

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“…a a Figure 5 The four configurations of the silicon vacancy (Watkins, 1991). Copyright Wiley-VCH Verlag GmbH&Co. KGaA.…”

Section: Electronic Structure and Electrical Level Positionsmentioning

confidence: 99%

“…The first experimental investigations of radiation induced self-interstitials in silicon date more than 50 years back (Watkins, 1991). Since then a huge number of experimental and theoretical investigations have been reported in the literature (Pichler, 2004).…”

Section: The Self-interstitialmentioning

confidence: 99%

“…There are quite a number of recent comprehensive reviews and books covering different aspects of the content of the present chapter from where we have been inspired and have received ideas: the very thorough book by Pichler (2004) on intrinsic point defects, impurities, and their diffusion in silicon, the review article by Auret and Deenapanray (2004) of deep level transient spectroscopy of defects in high-energy light-particle-irradiated Si, the review by Srour and Marshall (2003) of displacement damage effects in silicon devices, and finally but not least the many excellent reviews by Watkins (1986Watkins ( , 1991Watkins ( , 2000 on intrinsic defects in silicon.…”

Section: Introductionmentioning

confidence: 98%

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Electron and Proton Irradiation of Silicon

Larsen

Mesli

2015

Semiconductors and Semimetals

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“…a a Figure 5 The four configurations of the silicon vacancy (Watkins, 1991). Copyright Wiley-VCH Verlag GmbH&Co. KGaA.…”

Section: Electronic Structure and Electrical Level Positionsmentioning

confidence: 99%

Section: The Self-interstitialmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Electron and Proton Irradiation of Silicon

Larsen

Mesli

2015

Semiconductors and Semimetals

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“…a higher light output, a shorter response duration and a higher radiation stability, as compared with the wide used scintillator CsI(T1). These parameters of ZnSe crystal depend on intrinsic lattice defects, which are generated by special deviation from stoichiometry and doping with an isovalent impurity, as well as by different irradiations [2]. Thus, finding the proper non-stoichiometry, impurity and irradiation makes possible to improve the scintillating properties.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, finding the proper non-stoichiometry, impurity and irradiation makes possible to improve the scintillating properties. Radiolysis (radiation induced defect production in AIIB vl compounds) limits the radiation stability of the crystal lattice due to the anion evaporation from non-stoichiometric surface, intense local ionisation, weakening of chemical bonds and non-radiative decay of electronic excitations into Frenkel defects [2]. Efficient radiative process (radioluminescence) can be one competing to the defect production.…”

Section: Introductionmentioning

confidence: 99%

Radiolysis of ZnSe(Te, O) scintillators at neutron- and gamma-irradiation

2003

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Scintillating parameters of isovalently doped ZnSe(Te, O) crystals depend strongly on intrinsic point defects and impurities and deteriorate at different irradiations, because of structure damage. Study of ZnSe(Te, O) crystals with radiometric X-ray and instrumental neutron activation analyses (INAA) has showed that all samples had significant as-grown non-stoichiometry: ~ 49% Se and ~ 51% Zn, while the ideal stoichiometric ratio for ZnSe is 54.7% Se and 45.3% Zn. When doping with 0.5% Te, the impurity was found to be distributed non-evenly over the bulk with two maxima at -0.5 and = 0.25%, while at lower doping levels Te ions were distributed evenly. During ~/-and neutron irradiation up to 10 -5 g of ZnSe at ratio 50-60% Zn and 40-50% Se emitted from the surface due to radiolysis. This is the reason of weakening the luminescence delete.

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Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Pizzini

2012

Advanced Silicon Materials for Photovoltaic Applications

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This introductory chapter aims to present the unique potentialities of semiconductor silicon as the substrate or the component of a variety of devices that support the development of the society in which we live today and where our sons and daughters will live, hopefully, tomorrow; taking, however, as known all the very basic physics concerning the electronic and optical properties of semiconductor silicon as well as the basic concepts concerning silicon devices [1][2][3][4][5][6][7]. Also, considering the number of issues that should be taken into consideration to enlighten this critical role of silicon, only a few of these, selected in a very personal, and possibly not entirely objective, manner will be discussed in full detail.The discussion will start from the thermonuclear synthesis of silicon and will end with the properties and applications of silicon nanodots and nanowires studied today in research labs worldwide, with the consideration that silicon's uniqueness derives from its specific structural, physical and chemical properties, which make elemental silicon readily obtainable from widely diffused raw materials and directly suitable for technological applications in microelectronics, optoelectronics and photovoltaics, without neglecting high-power devices, chemical sensors and radiation detectors.The analysis will be focused on the variety of its structural forms, which range from single crystal towards microcrystalline, nanocrystalline and amorphous, with a discontinuous change of properties that, in fact, allow a multiplicity of applications.

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Intrinsic Point Defects in Semiconductors 1999

Cited by 5 publications

References 176 publications

Electron and Proton Irradiation of Silicon

Electron and Proton Irradiation of Silicon

Radiolysis of ZnSe(Te, O) scintillators at neutron- and gamma-irradiation

Silicon Science and Technology as the Background of the Current and Future Knowledge Society

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