Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Pizzini, S.

doi:10.1002/9781118312193.ch1

Cited by 8 publications

(8 citation statements)

References 68 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the crystallization of single silicon crystals, the area occupied by the drop will contain approximately 10 per cent of the extrinsic stacking (interstitial) atoms because of the higher (approximately 10 per cent) density of liquid silicon compared with a single crystal (Pizzini, 2012). At a certain drop size, extrinsic stacking atoms may transform into a dislocation loop (Figure 7).…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

The electrothermal impact on a contact metal-semiconductor: applications to the germanium–silver system

Скворцов

Khripach

Papkin

et al. 2018

View full text Add to dashboard Cite

Purpose This study aims to examine the electromigration processes resulting from thermal overloads of semiconductor devices. While in operation, parts of such devices can heat up to 330°C for a short period, resulting in the emergence of molten zones and the devices’ inevitable degradation. Therefore, this study examines the mechanisms behind the formation and migration of silver-based molten zones in bulk germanium and on its surface. Design/methodology/approach Experimental data concerning the correlation between the migration velocities of the inclusions and their sizes are obtained. Findings By comparing these experimental data with known electromigration models, it is concluded that inclusions move through the mechanism of melting and crystallization. The dynamics of Ge–Ag zones in the volume of a germanium crystal are compared to those on its surface and accelerated electromigration on the surface of the crystal is observed. This increased migration velocity is shown to be associated with additional contributions of the electrocapillary component. Originality/value The results of this study can be used to calculate the operating modes of semiconductor power devices under intense heat loading.

show abstract

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

The electrothermal impact on a contact metal-semiconductor: applications to the germanium–silver system

Скворцов

Khripach

Papkin

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Figures (3)(4)(5)(6) show the results of the proposed experimental approach, where it can be seen the I-V and P-V for the two solar modules at solar radiations 750 W/m 2 and 1000 W/m 2 at September, 2020. Consequently, Figure 7 to Figure 10 show the I-V and P-V for the two solar modules at solar radiations 750 W/m 2 and 1000 W/m 2 at January, 2021.…”

Section: Current-voltage and Power-voltage Characteristicmentioning

confidence: 99%

“…Where, each type has specific characteristics and cost that is different from the other type [ 2 . ] At present, the photovoltaic (PV) modules market consists of 90% conventional, diffused junction monocrystalline and polycrystalline silicon modules [3][4][5]. Also, there are other, more advanced types of PV modules in the market, but in a limited form.…”

Section: Introductionmentioning

confidence: 99%

Performance of Different Photovoltaic Technologies for Amorphous Silicon (A-Si) and Copper Indium Gallium Di-Selenide (Cigs) Photovoltaic Modules

Kadia

Hashim

Abdullah

2022

jeasd

View full text Add to dashboard Cite

In this work, the analysis of performance of two types of photovoltaic (PV) (Amorphous Silicon (a-Si) Copper Indium Gallium Diselenide (CIGS) technologies were achieved out under under Iraqi (Baghdad)climate conditions. The elevation of the selected site is 9 m above ground level. The experimental work covered the eight commercially available PV technologies. The two technologies that employed in this work are, Amorphous Silicon (a-Si) and Copper Indium Gallium Diselenide (CIGS). The total period of the experimental work was 7 months, and the data were analyzed simultaneously. Special attention is given to the influence of temperature and solar radiation the performance of the PV modules. Where, it was proposed a simple I-V curve test for PV modules. The results showed that the proposed system successfully experimentally extracted I-V curves of the selected two PV modules (amorphous and CIGS solar modules). The maximum values of power (Pmax) at solar radiation intensity 750 W/m² are 2.742 W, and 2.831 W for amorphous silicon and copper indium gallium di-selenide respectively. This is occurred because the lowest solar module operating temperature (19 oC and 17 oC for solar radiation 750 and 1000 W/m2 respectively) and ambient temperature (7 oC) and for Jan., 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. Furthermore, the minimum values of power (Pmax) at solarradiation intensity 750 W/m² are 2.530, and 2.831 for amorphous silicon and copper indium gallium di-selenide respectively because we have the highest solar module operating temperature (57 oC, and 55 oC respectively) and ambient temperature (45 oC) for April, 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. The highest efficiency can be notes for CIGS solar module with a value 7.3%, while the lowest one is 5.5% for amorphous solar module.

show abstract

“…In current crystalline silicon solar cells, thicknesses up to 300 µm provide the best performing devices. [2] However, not all materials can afford such widths due to low-mobility carriers [2,3] or expensive raw materials. [4] Diffusion lengths and recombination times limit the thickness and efficiency of many optoelectronic devices.…”

Section: Superabsorbersmentioning

confidence: 99%

Ultrathin Semiconductor Superabsorbers from the Visible to the Near‐Infrared

et al. 2018

View full text Add to dashboard Cite

in balancing out optimum thicknesses for charge extraction and efficient light absorption. [6] The ultimate goal of a lighttrapping strategy is to achieve complete absorption of light in a broad spectral range while using the minimum amount of photoactive material. Traditional waferbased technologies have extensively exploited light-trapping strategies up to a point where the classical limit of light trapping [7,8] is almost reached. [9] There is, however, an increasing interest in further decreasing the thickness of the active layer below the micron, where new properties appear for classic materials (such as flexibility for silicon [10] ) and new materials like plastics [11] or nanocrystals [12,13] can be used at lower processing costs. Capturing light in such ultrathin devices requires redesigning the strategy, moving away from traditional ray optics approximations into the wave optics regime. [6] Many wave optics based designs are being currently investigated; photonic crystals (PhCs), [14,15] plasmonics, [16,17] and microresonators [18][19][20] provide new and exciting means of confining light in subwavelength thin films. Nevertheless, strong absorption enhancements are not restricted exclusively to the above-mentioned photonic architectures. Kats et al. [21] demonstrated flat nanometric films (up to 25 nm) of amorphous germanium (a-Ge) with 90% absorption in the visible range when deposited on optically thick gold films. Simply put, nanometric semiconductor coatings on metallic films act as Gires-Tournois interferometers [22,23] (a Fabry-Perot resonator where one of the interfaces is metallic). Such absorption comes from a strong interference effect originated by both the nonideal behavior of the metal film at visible frequencies (allowing field penetration in the metal) and the high values of the complex refractive index of the semiconductor. In-depth analysis of these results revealed that this system sustains Fabry-Perot resonances (FPRs) coupled with Brewster modes, [24] which are incident wave modes with no scattered wave that can be accessed from air. The excitation of this Brewster mode is possible at normal incidence and endows the system with omnidirectional strong absorption [25] (Figures S1 and S2, Supporting Information). The thickness of the semiconductor layer determines the position of the minimum in the reflectivity (maximum in absorption) of these resonances with the particularity that, because of the penetration depth in the metal, the resonant condition is below the classical λ/4 condition. SuchThe design of ultrathin semiconducting materials that achieve broadband absorption is a long-sought-after goal of crucial importance for optoelectronic applications. To date, attempts to tackle this problem consisted either of the use of strong-but narrowband-or broader-but moderate-light-trapping mechanisms. Here, a strategy that achieves broadband optimal absorption in arbitrarily thin semiconductor materials for all energies above their bandgap is presented. This stems from the strong interplay...

show abstract

Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Cited by 8 publications

References 68 publications

The electrothermal impact on a contact metal-semiconductor: applications to the germanium–silver system

The electrothermal impact on a contact metal-semiconductor: applications to the germanium–silver system

Performance of Different Photovoltaic Technologies for Amorphous Silicon (A-Si) and Copper Indium Gallium Di-Selenide (Cigs) Photovoltaic Modules

Ultrathin Semiconductor Superabsorbers from the Visible to the Near‐Infrared

Contact Info

Product

Resources

About