Intrinsic defect states in CuInSe2 single crystals

Abou‐Elfotouh, F.; Dunlavy, D. J.; Coutts, T. J.

doi:10.1016/0379-6787(89)90032-x

Cited by 41 publications

(5 citation statements)

References 7 publications

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“…An important characteristic of Cu chalcogenides is their high defect concentration, which plays a key role in determining most of their properties, including charge and heat transport, optoelectronic, optic, and plasmonic properties. Cu chalcogenide compounds tolerate a large range and density of nonstoichiometry and antisite defects, which may result in spatial compositional inhomogeneities and ordered defect compounds. − Several reports have focused on a calculation of defects in Cu chalcogenides, including CuInSe 2 , ,,− Cu 2 SnS 3 , CuGaS 2 , CuSbSe 2, and CZTS. ,,,− While both anion and cation deficiencies are tolerated, inducing n- or p-type conductivities, Cu chalcogenides with p-type conductivity are the most common, where their p-type conductivity is associated with Cu vacancies. As an example, it takes much less energy to form a Cu vacancy in CuInSe 2 than to form cation vacancies in the II-VI compounds, and the low formation energy of the shallow defect Cu vacancies provides CuInSe 2 with p-type self-doping.…”

Section: Functional Propertiesmentioning

confidence: 99%

Compound Copper Chalcogenide Nanocrystals

et al. 2017

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This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

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Section: Functional Propertiesmentioning

confidence: 99%

Compound Copper Chalcogenide Nanocrystals

et al. 2017

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“…In the low temperature domain, the activation energy could be attributed to activation of carriers from an energy level introduced in the band gap by some defects/or impurities. Such ionisation energy (80 meV) has already been measured in these ternary compounds [17,18].…”

Section: Discussionmentioning

confidence: 76%

New buffer layers, large band gap ternary compounds: CuAlTe₂

et al. 2000

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After deposition, by evaporation under vacuum, of Al/Cu/Te. multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallised in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2−xTe degenerate phase present at the surface of the films. This effect can be suppressed by KCN etching of the samples that allows the superficial foreign phase to be dissolved.

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“…It is rather likely that this defect is identical with the shallow acceptor with an ionisation energy of about 50 meV observed in CuInSe, crystals intentionally doped with oxygen (MATSUSHITA et al). Probably, a specific additional structure detected in the near-edge photoluminescence spectra of CuInSe, single crystals after annealing in air (ABOU-ELFOTOUH et al 1989) or implantation of oxygen (ABOU-ELFOTOUH et al 1990) and of air-annealed CuInSe, thin films (KUSHIYA et al) is caused by the same defect.…”

Section: Discussionmentioning

confidence: 99%

Photoacoustic Spectroscopy of Defect States in Etched and Air‐annealed CuInSe₂ Single Crystals

Zegadi

Yakushev

Neumann³

et al. 1995

Cryst. Res. Technol.

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Photoacoustic spectra of cleaved, polished and etched, and air-annealed n-type CuInSe, single crystals are measured at different frequencies between 30 and 312 Hz. The spectra related to the bulk of the crystals exhibit five structures due to defects that are also present in p-type crystals. Polishing and etching as well as subsequent air annealing at 100, 200 and 300 "C reveal rather complex changes of the defect equilibrium in the near-surface region of the crystals which include both relative concentration changes of existing defects and creation of new defects. The results for polished and etched crystals correspond to trends expected from etching induced local modifications of the composition and structure as revealed by electron spectroscopies and ion channeling. Air annealing is found to affect all existing defects and to create up to five new defects which cannot be explained in terms of the related point defect model proposed by CAHEN and NOUFI.

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Intrinsic defect states in CuInSe2 single crystals

Cited by 41 publications

References 7 publications

Compound Copper Chalcogenide Nanocrystals

Compound Copper Chalcogenide Nanocrystals

New buffer layers, large band gap ternary compounds: CuAlTe₂

Photoacoustic Spectroscopy of Defect States in Etched and Air‐annealed CuInSe₂ Single Crystals

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Intrinsic defect states in CuInSe2 single crystals

Cited by 41 publications

References 7 publications

Compound Copper Chalcogenide Nanocrystals

Compound Copper Chalcogenide Nanocrystals

New buffer layers, large band gap ternary compounds: CuAlTe2

Photoacoustic Spectroscopy of Defect States in Etched and Air‐annealed CuInSe2 Single Crystals

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Product

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New buffer layers, large band gap ternary compounds: CuAlTe₂

Photoacoustic Spectroscopy of Defect States in Etched and Air‐annealed CuInSe₂ Single Crystals