New buffer layers, large band gap ternary compounds: CuAlTe<sub>2</sub>

Benchouk, K.; Benseddik, E.; Moctar, C. O. El; Bernède, J.C.; Marsillac, Sylvain; Pouzet, J.; Khellil, A.

doi:10.1051/epjap:2000114

Cited by 20 publications

(4 citation statements)

References 14 publications

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“…CuAlTe 2 , with reported gaps of ∼2.1–2.5 eV, is p-type with typical high resistivities (∼10 –3 S cm –1 ) and mobilities of ∼5–6 cm 2 V –1 s –1 . Conductivity reportedly can reach up to ∼10 S cm –1 at room temperature; however, its electronic properties have not been as heavily investigated as CuAlS 2 and CuAlSe 2 . The growth of CuAlTe 2 thin films by RF sputtering is p-type as-deposited but converted to n-type after a 140 °C anneal presumably due to acceptor–donor compensation .…”

Section: Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“… The experimental data were adopted from a CRC Handbook 39 except AgAlSe 2 40 , AgAlTe 2 40 , AgGaTe 2 40 , CdO 2 41 , CdSnP 2 42 , CuAlS 2 43 , CuAlTe 2 44 , HgIn 2 Se 4 45 , and InN 46 for which more reliable measurements are cited, and CeO 2 47 and La 2 S 3 48 which represent lanthanides. …”

Section: Online-only Tablementioning

confidence: 99%

A band-gap database for semiconducting inorganic materials calculated with hybrid functional

et al. 2020

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Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting optimal materials in each application. While there exist several band-gap databases that are theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as band-gap underestimation and metastable magnetism. In this data descriptor, we present a computational database of band gaps for 10,481 materials compiled by applying a hybrid functional and considering the stable magnetic ordering. For benchmark materials, the root-mean-square error in reference to experimental data is 0.36 eV, significantly smaller than 0.75–1.05 eV in the existing databases. Furthermore, we identify many small-gap materials that are misclassified as metals in other databases. By providing accurate band gaps, the present database will be useful in screening materials in diverse applications.

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“…Then this precursor was sulphured for 10-30 min using an S evaporation source while the substrate temperature is kept at T s ¼ 723 K, in order to achieve CuFeS 2 films. Such a two-step process has been already used with success in the laboratory in the case of other ternary compounds such as CuAlSe 2 [15] and CuAlTe 2 [16].…”

Section: Thin Films' Synthesismentioning

confidence: 99%