Growth and characterization of CuFeS2 thin films

Barkat, L.; Hamdadou, N.; Morsli, M.; Khelil, A.; Bérnède, J.C.

doi:10.1016/j.jcrysgro.2006.10.105

“…The grain sizes of annealed films are enhanced with increasing Cu concentration (x) which is possibly due to the facilitation of Cu on grain growth [27]. The thicknesses of synthesized films were measured to be in the range of 1.3-2 mm which is similar to earlier reports [17,28,31].…”

Section: Composition and Surface Morphologysupporting

confidence: 84%

“…Sato et al have examined optical, electrical and magnetic properties of chalcopyrite CuFeS 2 [15,16]. The chalcopyrite CuFeS 2 also has been synthesized to investigate its possible applications in photovoltaics, thermoelectric and spintronic devices [17][18][19][20][21][22]. Oliveira et al [23] investigated the reconstruction of the chalcopyrite surfaces by DFT calculations.…”

Section: Introductionmentioning

confidence: 99%

Sulfur stoichiometry driven chalcopyrite and pyrite structure of spray pyrolyzed Cu-alloyed FeS2 thin films

Rana

¹

,

Khadka

²

,

Kim

³

2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…Topography was measured by using an atomic force microscopy (Quesant Instrument Corporation, Q-Scope 250) operating in contact mode, with Si 3 N 4 cantilever. Photoelectrochemical (PEC) experiments were performed using a [Fe(CN) 6 ] 3-/[Fe(CN) 6 ] 4-redox system, by performing linear sweep voltammetry between -500 to -1000 mV. The sequence of constant illumination and dark period were performed on the PEC cell to study the effect on photoactivity behavior.…”

Section: Methodsmentioning

confidence: 99%

“…There are many techniques for preparing thin films such as plasma-enhanced chemical vapor deposition, 1 metal organic chemical vapor deposition, 2 thermal evaporation, 3 chemical bath deposition, 4 close spaced sublimation, 5 vacuum evaporation, 6 electrodeposition, 7 molecular beam epitaxy, 8 spray pyrolysis 9 and sputter deposition 10 . Amongst these deposition techniques, chemical bath deposition is most commonly used because it is a simple, cost effective and convenient for larger area deposition of thin films.…”

Section: Introductionmentioning

confidence: 99%

Influence of Bath Temperature and Ph Value on Properties of Chemically Deposited Cu4sns4 Thin Films

Kassim

¹

,

Tee

²

,

Sharif

³

et al. 2009

J. Chil. Chem. Soc.

View full text Add to dashboard Cite

Thin films of Cu 4 SnS 4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu 4 SnS 4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane of Cu 4 SnS 4 . The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition.

show abstract

“…There are many techniques for preparing thin films such as plasma-enhanced chemical vapor deposition, 1 metal organic chemical vapor deposition, 2 thermal evaporation, 3 chemical bath deposition, 4 close spaced sublimation, 5 vacuum evaporation, 6 electrodeposition, 7 molecular beam epitaxy, 8 spray pyrolysis 9 and sputter deposition 10 . Amongst these deposition techniques, chemical bath deposition is most commonly used because it is a simple, cost effective and convenient for larger area deposition of thin films.…”

Section: Introductionmentioning

confidence: 99%

Influence of Bath Temperature and Ph Value on Properties of Chemically Deposited Cu4sns4 Thin Films

Kassim

¹

,

Tee

²

,

Sharif

³

et al. 2009

J. Chil. Chem. Soc.

View full text Add to dashboard Cite

Thin films of Cu 4 SnS 4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu 4 SnS 4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane of Cu 4 SnS 4 . The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition.

show abstract

Growth and characterization of CuFeS2 thin films

Cited by 48 publications

References 20 publications

Sulfur stoichiometry driven chalcopyrite and pyrite structure of spray pyrolyzed Cu-alloyed FeS2 thin films

Sulfur stoichiometry driven chalcopyrite and pyrite structure of spray pyrolyzed Cu-alloyed FeS2 thin films

Influence of Bath Temperature and Ph Value on Properties of Chemically Deposited Cu4sns4 Thin Films

Influence of Bath Temperature and Ph Value on Properties of Chemically Deposited Cu4sns4 Thin Films

Contact Info

Product

Resources

About