Influence of Bath Temperature and Ph Value on Properties of Chemically Deposited Cu4sns4 Thin Films

Abstract

Thin films of Cu 4 SnS 4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu 4 SnS 4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane of Cu 4 SnS 4 . The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition.

Metal Chalcogenide Nanocrystalline Solid Thin Films

“…Sadekar et al 126 deposited cubic zinc blende structures on glass substrates using triethanolamine as the complexing agent, and the band gap was found to be 2.71 eV. Kassim et al 127 prepared ZnSe thin films over ITOcoated glass substrates and found that the surface morphology of the thin films mainly depends upon the bath temperature. Lokhande et al 128 prepared ZnSe thin films on glass and FTO-coated glass substrates and found the optical band gap to be 2.9 eV.…”

Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique

“…Nowadays, there are the different techniques for fabrication ZnSe films: thermal evaporation [7], pulsed laser deposition [8], chemical bath deposition [9], spray pyrolysis [10], pulsed laser ablation [11], electrochemical deposition [12], molecular beam epitaxy [13], magnetron sputtering [14], close-spaced vacuum sublimation (CSVS) [15]. The last method due to the technical features of evaporator, allows to obtain fine-crystalline stoichiometric films in conditions approach to the thermodynamic equilibrium.…”