Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus

Kim, Min-Ju; Kim, Han Gyu; Park, Soo Hyung; Kim, Jin Sung; Choi, Hyoung Joon; Im, Seongil; Lee, Hyunbok; Kim, Taekyeong; Yi, Yeonjin

doi:10.1002/anie.201811743

Cited by 27 publications

(20 citation statements)

References 39 publications

(95 reference statements)

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“…Among them, BP-based PSPDs have the highest photocurrent anisotropy ratio of 0.59 [ 16 ], benefitting from its high carrier mobility and the strong in-plane anisotropy coming from the low-symmetry puckered honeycomb crystal structure [ 17 , 18 ]. But with BP-based optoelectronic devices it is hard to get rid of the ambient degradation problem [ 19 , 20 ]. 2D layered indium selenide (InSe), which also has high carrier mobility and is more stable than BP in an atmospheric environment [ 21 ], exhibits huge potential for application in high-performance optoelectronic and electronic devices [ 22 – 27 ].…”

Section: Introductionmentioning

confidence: 99%

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Guo

Cao

Wang

et al. 2021

National Science Review

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Two-dimensional (2D) indium selenide (InSe) has been widely studied for applications in transistors and photodetectors, benefitting from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a nonsymmetry point group of $D_{6h}^4$, which indicates a stronger anisotropic transport behavior and a potential in the polarized photodetection of β-InSe based optoelectronic devices. Therefore, we prepare the stable p-type 2D layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proved. It shows that the β-InSe based device has a ratio of 3.76 for the maximum to minimum dark current and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization sensitive photodetectors.

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Section: Introductionmentioning

confidence: 99%

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Guo

Cao

Wang

et al. 2021

National Science Review

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“…However, the vulnerability of the lone pair on phosphorene to oxidation by electrophilic reagents limits phosphorene's stability in the presence of O 2 and water [7][8][9][10], which undermines its practicability in practical applications. It is generally believed that the oxidation reaction is initiated upon contact of O 2 on the phosphorene surface, followed by removal of P x O y from the surface and exposure of P 0 for further oxidation [11][12][13][14]. In order to address this intrinsic shortcoming, surface capping layers including graphene, hexagonal boron nitride, and aluminum oxide layers have been harnessed to protect phosphorene against O 2 and water [9,[15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Surface functionalization of phosphorene via P-H bond for ambient protection and robust photocatalytic H2 evolution

et al. 2021

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The facile oxidation of few-layer black phosphorus (i.e., phosphorene) in the atmospheric environment is a major hurdle for its applications in photocatalytic solarenergy conversion. The introduction of protective layers, such as a surface capping layer, surface coordination, and P-C covalent functionalization, can protect phosphorene from oxidative degradation but inevitably decreases its photocatalytic performance due to the blockage of catalytic active sites. Herein, we develop a hydrogenation approach via the introduction of P-H covalent bonds on the surface of phosphorene (i.e., phosphorene-H) to inhibit the oxidation of phosphorene-H without sacrificing the original photocatalytic H 2 evolution performance. Experiments and density functional theory calculations demonstrate that about 5 mol% of phosphorus atoms in phosphorene-H are involved in forming P-H covalent bonds, hindering the reaction between O 2 and phosphorene-H in terms of thermodynamics and kinetics. This hydrogenation strategy is envisaged to augment the prospect of phosphorene in the field of photocatalysis.

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“…Moreover, the formation of the POP bond can improve the stability of BP, and the use of naturally oxidized BP as a protective layer can be considered. [ 19 ]…”

Section: Introductionmentioning

confidence: 99%

“…Choosing a suitable dielectric layer can improve the stability of the few layers of BP. [ 19 ] The physical method is to cover something on the surface of BP to prevent O 2 from contacting BP, such as Al 2 O X , hBN, SiO 2 , MoS 2 , GO, ionophores, and organic polymers. [ 20–25 ] The chemical method is mainly to passivate the lone pair electrons of the P atom in BP to inhibit the reaction of O 2 and BP, such as small organic molecules, chemical reagents, organic polymers, and metal complexes.…”

Section: Introductionmentioning

confidence: 99%

Bandgap Modulation in BP Field Effect Transistor and Its Applications

Zhang

Sun

et al. 2021

Adv Elect Materials

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Black phosphorus (BP), an emerging crystal material with prominent features such as high carrier mobility and easily modulated band structure, fills the deficiencies of graphene and transition metal dichalcogenides. It has become a key component of 2D materials. The biggest advantage of BP is reflected in the fixed and direct energy band structure. Starting from the introduction of BP's crystal structure, this work reviews the important role of doping strategies, van der Waals heterojunction, and contact engineering thickness control technology in bandgap adjustment and performance improvement of BP field effect transistors. The focus is to put on the enhanced performance of electronic devices in high mobility, fast response speed, wide spectral range, low power consumption, and stronger stability caused by bandgap modulation. These methods cover from advanced technology to a wide range of electrical and optoelectronic progress in recent years, showing a booming development trend. In addition, considering the breakthrough of BP in new physics and application prospects, the potential applications of the active field are highlighted in this work.

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Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus

Cited by 27 publications

References 39 publications

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Surface functionalization of phosphorene via P-H bond for ambient protection and robust photocatalytic H2 evolution

Bandgap Modulation in BP Field Effect Transistor and Its Applications

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