Intraband photon absorption in edge-defined nanowire superlattices for optoelectronic applications

Abstract

We calculate the conduction miniband energy dispersion relation in an edge-defined silicon quantum wire periodic nanostructure embedded in SiO2. Our main aim is to predict the behavior of these nanostructures when used as components in optoelectronic devices such as, for example, photodetectors or intermediate-band solar cells. We take into consideration the effects of nonparabolicity and anisotropy and the different electron states arising from each valley when solving the Schrödinger equation. From these results, we investigate the intraband photon absorption coefficient for those transitions between minibands arising from the conduction band. We analyze the influence of light polarization and level of doping of the system in order to ascertain the best conditions for operation.

Influence on miniband structure of size variations in regimented InAs/GaAs quantum dots arrays

“…[7][8][9] From the theoretical point of view, several investigations have reported some physical features of such systems. Studies on thermal conduction, 10 charge transport, 11 and optical absorption 12,13 in these systems have been carried out in the last years.…”

Rashba spin–orbit interaction effect on multiphoton optical transitions in a quantum dot

“…Floquet theory relates the solution of the Schrodinger equation involving a periodic Hamiltonian to the solution of another equation with a time‐independent Hamiltonian represented by an infinite matrix called the Floquet matrix. This method, which has been applied previously to various atomic systems and nanostructures , has the distinct advantage of handling both discrete and continuous states in a single system. This paper is organized in the following way.…”

NEMS by Sidewall Transfer Lithography

“…STL has also been applied to nanowire arrays in various materials including silicon, diamond, platinum, platinum silicide and nickel silicide, with applications ranging from sensing to catalytic surfaces [33][34][35][36][37][38]. Further applications include field emission electrodes [39,40] and quantum dots [41][42][43]. Silicon stamps for nanoimprint lithography have also been extensively explored [44][45][46][47][48][49][50][51].…”