NEMS by Sidewall Transfer Lithography

Liu, Dixi; Syms, R.R.A.

doi:10.1109/jmems.2014.2313462

Cited by 13 publications

(13 citation statements)

References 56 publications

(67 reference statements)

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“…This technology only uses i-line stepper lithography to define NWs. This technique is based on the conformal deposition of silicon nitride film by low pressure chemical vapor deposition (LPCVD) over a previously patterned step in dummy gate α-Si [57,70,71] as shown in Figure 2a-j. With this technique, a minimum 10 nm width NW could be generated depending on the width of the spacer, which is determined by the thickness of deposited silicon nitride.…”

Section: Side Wall Transfer Lithography (Stl)mentioning

confidence: 99%

Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

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Section: Side Wall Transfer Lithography (Stl)mentioning

confidence: 99%

Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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“…Coupling must be weak to achieve a bandwidth suitable for applications such as intermediate frequency (IF) filtering. Mechanical coupling elements must then be nanostructured [43][44][45][46]. Electrode gaps must also be very small for realistic input and output impedance, further complicating fabrication [47][48][49][50].…”

Section: Introductionmentioning

confidence: 99%

Mechanical Synchronization of MEMS Electrostatically Driven Coupled Beam Filters

Syms

Bouchaala

2021

Micromachines

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Micro-electromechanical systems (MEMS) bandpass filters based on arrays of electrostatically driven coupled beams have been demonstrated at MHz frequencies. High performance follows from the high Q-factor of mechanical resonators, and electrostatic transduction allows tuning, matching and actuation. For high-order filters, there is a conflict between the transduction mechanism and the coupling arrangement needed for dynamic synchronization: it is not possible to achieve synchronization and tuning simultaneously using a single voltage. Here we propose a general solution, based on the addition of mass-loaded beams at the ends of the array. These beams deflect for direct current (DC) voltages, and therefore allow electrostatic tuning, but do not respond to in-band alternating current (AC) voltages and hence do not interfere with synchronization. Spurious modes generated by these beams may be damped, leaving a good approximation to the desired response. The approach is introduced using a lumped element model and verified using stiffness matrix and finite element models for in-plane arrays with parallel plate drives and shown to be tolerant of the exact mass value. The principle may allow compensation of fabrication-induced variations in complex filters.

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“…However, small electrode gaps are needed to reduce matching loads, and parasitic coupling to the substrate must be compensated (Abdolvand et al 2004). Sub-micron gaps have been obtained using the HARPSS process (Arellano et al 2008) or movable electrodes (Liu and Syms 2014).…”

Section: Introductionmentioning

confidence: 99%

New architectures for micromechanical coupled beam array filters

Bouchaala

Syms

2020

Microsyst Technol

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Coupled resonator filters implemented as microelectromechanical systems (MEMS) offer performance advantages as band-pass filters at MHz frequencies. Here new designs based on resonant cavities for acoustic slow waves are developed to allow alternative frequency responses. Derivation of the lumped element model for coupled beam systems with in-plane motion from Rayleigh–Ritz perturbation theory is first reviewed. Departures from ideal behaviour caused by mechanical and electrostatic detuning are resolved. Slow wave theory is then used to develop linear array topologies with novel responses including band-stop and comb filtering with controlled filter roll-off. A systematic procedure is developed to allow rapid identification of design parameters without the need for lengthy numerical simulation, using the lumped element, stiffness matrix and finite element methods to investigate the layout parameters of initial design concepts, detailed mechanical effects and detailed electrostatic effects, respectively. High performance is demonstrated, with good agreement between the models.

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NEMS by Sidewall Transfer Lithography

Cited by 13 publications

References 56 publications

Silicon Nanowires for Gas Sensing: A Review

Silicon Nanowires for Gas Sensing: A Review

Mechanical Synchronization of MEMS Electrostatically Driven Coupled Beam Filters

New architectures for micromechanical coupled beam array filters

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