Interrelations between defects in the Hg1−xCdxTe epilayers and their measured lattice parameters and composition

Mainzer, N.; Lakin, E.; Bahir, G.; Zolotoyabko, E.

doi:10.1007/s11664-999-0082-2

Cited by 6 publications

(6 citation statements)

References 22 publications

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“…In a subsequent review, Capper [23] reports a(x ) = 6.4614 + 0.0084x + 0.0168x 2 − 0.0057x 3 Å (8.16) as the expression for the variation of lattice parameter, a, with the composition, x , which was proposed by Higgins et al [3]; and points out that the differences with Brice's near-stoichiometric case and that of Woolley and Ray [24] amount to ±0.001Å or less. Additional data for bulk material [5,[25][26][27], as well as for molecular beam epitaxy (MBE) [28,29,33], liquid phase epitaxy (LPE) [30][31][32]35], and metal-organic vapor phase epitaxy (MOVPE) [36] material are also shown in Figure 8.3, which are in general agreement with each other and with Equation 8.16. In contrast, earlier MOVPE growth of HgTe layers on CdTe by Bhat et al [38] resulted in lattice parameters of 6.454-6.456Å at 1.0-3.5 μm film thickness.…”

Section: Variation Of Lattice Parameter With Xsupporting

confidence: 61%

“…Mainzer et al [35] investigated more than 50 LPE-grown samples with 0.23 ≤ x < 0.25 and the measured lattice parameter is in agreement with Vegard's law and with Ref. [33] for most of the samples, however, even though the averaged value exhibits an excellent agreement with Vegard's law, Mainzer et al observed outliers, as can be seen in Figure 8.3.…”

Section: Variation Of Lattice Parameter With Xmentioning

confidence: 63%

See 1 more Smart Citation

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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Section: Variation Of Lattice Parameter With Xsupporting

confidence: 61%

Section: Variation Of Lattice Parameter With Xmentioning

confidence: 63%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…The mole-fraction of sample M 77 has been calculated as x β ϭ 0.334, based on x-ray measurements of the (404) and (440) RLPs. The discrepancy between the mole fraction calculated from FTIR (x IR ϭ 0.324) and x-ray techniques may be attributed to swelling of the HgCdTe lattice due to Te inclusions, as has been reported for LPE grown epilayers, 6 or, alternatively, dislocations in the lattice may have led to an increase in the average lattice spacing, as described by Rhiger et al 15 Sample M 73 is a MBE-grown double-layer HgCdTe structure, with only CdTe and Hg fluxes used to grow the top layer. This structure was grown to investigate the effects of CdTe passivation on the HgCdTe lattice strains or dislocations.…”

Section: Resultsmentioning

confidence: 80%

“…4 Deviations from stoichiometry influence the lattice parameter of HgCdTe, where Te-rich material has an increased lattice constant. 5,6 The relatively small mismatch between CdTe and HgCdTe has a significant effect on the quality of epitaxial HgCdTe grown on CdTe by both LPE and MBE, and has prompted the move to Cd (1-y) Zn (y) Te substrates so that the substrate is lattice matched to Hg (1-x) Cd (x) Te for a particular mole fraction x.…”

Section: Introductionmentioning

confidence: 99%

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Sewell

Musca

Dell

et al. 2005

Journal of Elec Materi

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Lattice mismatch between substrates and epitaxial layers of different molefractions can create a variety of distortions and defects in Hg (1-x) Cd (x) Te epilayers, thus degrading the performance of infrared detectors fabricated from this material. X-ray diffraction is a sensitive nondestructive technique, which allows in-depth characterization of the crystal lattice prior to detector fabrication. We present results of triple-axis diffractometry performed on single-and double-layer HgCdTe films grown on (211)B CdZnTe substrates by molecular beam epitaxy (MBE). In this study, both the ω and 2θ diffraction angles have been recorded absolutely so that the diffraction peaks in the RSMs can be positioned directly in reciprocal space, without requiring reference to a substrate peak. The positions of both surface-symmetric and asymmetric diffraction peaks have been used to extract lattice spacings parallel and perpendicular to the (211) growth direction. The relaxed lattice parameter of each epilayer has been calculated assuming that the layers are elastically strained. The low symmetry of the (211) growth direction, coupled with the anisotropic elasticity of zinc-blende semiconductors, results in monoclinic distortion of the lattice, as observed in these samples. In double-layer samples, the mosaicity of both layers is greater than that observed in single epilayers. Layers subjected to a Hg-saturated anneal show greater lattice distortion than as-grown samples.

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“…7a) and attributed to clusters of point defects. 24 After implantation, the surface of the sample with x < x c looks much smoother (see Fig. 7b) due to partial recovery of defected regions by a flux of Te and Hg interstitials from the layer interior to the surface.…”

Section: Resultsmentioning

confidence: 98%